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Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
39AH8769
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Newark | Mosfet, N-Ch, 60V, 150Deg C, 83W Rohs Compliant: Yes |Infineon BSC027N06LS5ATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1842 |
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$1.2200 / $2.5600 | Buy Now |
DISTI #
86AK4432
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Newark | Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC027N06LS5ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.1100 | Buy Now |
DISTI #
BSC027N06LS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 60V 100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14770 In Stock |
|
$1.0695 / $2.4600 | Buy Now |
DISTI #
BSC027N06LS5ATMA1
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Avnet Americas | Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC027N06LS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.9652 / $1.1030 | Buy Now |
DISTI #
726-BSC027N06LS5ATMA
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Mouser Electronics | MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant | 17225 |
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$1.0600 / $2.4600 | Buy Now |
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Future Electronics | 60V 134A 2.7 mΩ N-ch SuperSO8 5x6 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.9900 | Buy Now |
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Future Electronics | 60V 134A 2.7 mΩ N-ch SuperSO8 5x6 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.9900 | Buy Now |
DISTI #
SP001385616
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EBV Elektronik | Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP001385616) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BSC027N06LS5ATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSC027N06LS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SUPERSO8, TDSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.0027 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC027N06LS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC027N06LS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
DMT6004LPS-13 | Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Diodes Incorporated | BSC027N06LS5ATMA1 vs DMT6004LPS-13 |
BSC028N06NSATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC027N06LS5ATMA1 vs BSC028N06NSATMA1 |
SP000453652 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 | Infineon Technologies AG | BSC027N06LS5ATMA1 vs SP000453652 |
BSC028N06NS | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC027N06LS5ATMA1 vs BSC028N06NS |
BSC028N06NSTATMA1 | Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC027N06LS5ATMA1 vs BSC028N06NSTATMA1 |
BSB028N06NN3G | Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | BSC027N06LS5ATMA1 vs BSB028N06NN3G |