Datasheets
BSC027N06LS5ATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8

Part Details for BSC027N06LS5ATMA1 by Infineon Technologies AG

Overview of BSC027N06LS5ATMA1 by Infineon Technologies AG

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Price & Stock for BSC027N06LS5ATMA1

Part # Distributor Description Stock Price Buy
DISTI # 39AH8769
Newark Mosfet, N-Ch, 60V, 150Deg C, 83W Rohs Compliant: Yes |Infineon BSC027N06LS5ATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1842
  • 1 $2.5600
  • 10 $2.1300
  • 25 $1.9900
  • 50 $1.8400
  • 100 $1.7000
  • 250 $1.5600
  • 500 $1.4400
  • 1,000 $1.2200
$1.2200 / $2.5600 Buy Now
DISTI # 86AK4432
Newark Mosfet, N-Ch, 60V, 100A, Tdson Rohs Compliant: Yes |Infineon BSC027N06LS5ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.1100
$1.1100 Buy Now
DISTI # BSC027N06LS5ATMA1CT-ND
DigiKey MOSFET N-CH 60V 100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 14770
In Stock
  • 1 $2.4600
  • 10 $2.0470
  • 100 $1.6294
  • 500 $1.3787
  • 1,000 $1.1698
  • 2,000 $1.1113
  • 5,000 $1.0695
$1.0695 / $2.4600 Buy Now
DISTI # BSC027N06LS5ATMA1
Avnet Americas Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC027N06LS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.1030
  • 10,000 $1.0686
  • 20,000 $1.0341
  • 30,000 $0.9996
  • 40,000 $0.9652
$0.9652 / $1.1030 Buy Now
DISTI # 726-BSC027N06LS5ATMA
Mouser Electronics MOSFET DIFFERENTIATED MOSFETS RoHS: Compliant 17225
  • 1 $2.4600
  • 10 $2.0400
  • 100 $1.6200
  • 250 $1.5000
  • 500 $1.3600
  • 1,000 $1.1600
  • 2,500 $1.1100
  • 5,000 $1.0600
$1.0600 / $2.4600 Buy Now
Future Electronics 60V 134A 2.7 mΩ N-ch SuperSO8 5x6 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.9900
$0.9900 Buy Now
Future Electronics 60V 134A 2.7 mΩ N-ch SuperSO8 5x6 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $0.9900
$0.9900 Buy Now
DISTI # SP001385616
EBV Elektronik Transistor MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Alt: SP001385616) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BSC027N06LS5ATMA1

BSC027N06LS5ATMA1 CAD Models

BSC027N06LS5ATMA1 Part Data Attributes:

BSC027N06LS5ATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC027N06LS5ATMA1 Infineon Technologies AG Power Field-Effect Transistor, 23A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SUPERSO8, TDSON-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 100 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.0027 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC027N06LS5ATMA1

This table gives cross-reference parts and alternative options found for BSC027N06LS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC027N06LS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMT6004LPS-13 Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSC027N06LS5ATMA1 vs DMT6004LPS-13
BSC028N06NSATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC027N06LS5ATMA1 vs BSC028N06NSATMA1
SP000453652 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8 Infineon Technologies AG BSC027N06LS5ATMA1 vs SP000453652
BSC028N06NS Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC027N06LS5ATMA1 vs BSC028N06NS
BSC028N06NSTATMA1 Power Field-Effect Transistor, 23A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 Infineon Technologies AG BSC027N06LS5ATMA1 vs BSC028N06NSTATMA1
BSB028N06NN3G Power Field-Effect Transistor, 22A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN Infineon Technologies AG BSC027N06LS5ATMA1 vs BSB028N06NN3G

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