Part Details for BSC196N10NSGATMA1 by Infineon Technologies AG
Overview of BSC196N10NSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
Price & Stock for BSC196N10NSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
60R2519
|
Newark | Mosfet, N Channel, 100V, 45A, Pg-Tdson-8, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC196N10NSGATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 6491 |
|
$0.4780 / $1.2600 | Buy Now |
|
DISTI #
BSC196N10NSGATMA1CT-ND
|
DigiKey | MOSFET N-CH 100V 8.5A/45A TDSON Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
52555 In Stock |
|
$0.4606 / $1.2300 | Buy Now |
|
DISTI #
BSC196N10NSGATMA1
|
Avnet Americas | Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC196N10NSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.4291 / $0.4904 | Buy Now |
|
|
Future Electronics | N-Channel 100 V 19.6 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$0.4500 | Buy Now |
|
|
Future Electronics | N-Channel 100 V 19.6 mOhm OptiMOS™2 Power-Transistor - PG-TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
|
$0.4500 / $0.4700 | Buy Now |
|
|
Bristol Electronics | 2 |
|
RFQ | ||
|
DISTI #
SP000379604
|
EBV Elektronik | Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON T/R (Alt: SP000379604) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 19 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
LCSC | 100V 78W 19.6m45A10V 4V42uA 1PCSNChannel TDSON-8 MOSFETs ROHS | 20 |
|
$0.6983 / $1.1459 | Buy Now |
Part Details for BSC196N10NSGATMA1
BSC196N10NSGATMA1 CAD Models
BSC196N10NSGATMA1 Part Data Attributes:
|
|
BSC196N10NSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC196N10NSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 8.5A I(D), 100V, 0.0196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
|
| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8.5 A | |
| Drain-source On Resistance-Max | 0.0196 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 164 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |