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Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-BSG0811ND
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Mouser Electronics | MOSFET TRENCH <= 40V RoHS: Compliant | 45137 |
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$1.1200 / $2.7400 | Buy Now |
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Bristol Electronics | 4645 |
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RFQ | ||
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Bristol Electronics | Min Qty: 2 | 190 |
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$1.0125 / $2.7000 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 19A I(D), 25V, 0.004OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 152 |
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$1.2600 / $3.6000 | Buy Now |
DISTI #
SMC-BSG0811ND
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days Date Code: 1844 Container: Other | 5203 |
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RFQ | |
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Chip 1 Exchange | INSTOCK | 6407 |
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RFQ | |
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Win Source Electronics | MOSFET 2N-CH 25V 19A/41A 8TISON / Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R | 38300 |
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$0.8480 / $1.2720 | Buy Now |
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BSG0811ND
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSG0811ND
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N7 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Case Connection | SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N7 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |