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Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC8343
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Newark | Mosfet, N-Ch, 25V, 50A, 150Deg C, 6.25W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:50A, Continuous Drain Current Id P Channel:50A Rohs Compliant: Yes |Infineon BSG0811NDATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 162 |
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$1.3500 / $2.8400 | Buy Now |
DISTI #
BSG0811NDATMA1CT-ND
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DigiKey | MOSFET 2N-CH 25V 19A/41A TISON8 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
5476 In Stock |
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$1.1890 / $2.7400 | Buy Now |
DISTI #
BSG0811NDATMA1
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Avnet Americas | Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$1.4255 | Buy Now |
DISTI #
726-BSG0811NDATMA1
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Mouser Electronics | MOSFET TRENCH <= 40V RoHS: Compliant | 261 |
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$1.1800 / $2.6000 | Buy Now |
DISTI #
V72:2272_06383271
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Arrow Electronics | Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2236 Container: Cut Strips | Americas - 407 |
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$1.2340 / $1.7910 | Buy Now |
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Future Electronics | Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$1.1900 | Buy Now |
DISTI #
63378422
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Verical | Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R Min Qty: 5 Package Multiple: 1 Date Code: 2236 | Americas - 407 |
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$1.2340 / $1.7910 | Buy Now |
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Rochester Electronics | BSG0811 -Dual N-Channel OptiMOS MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 21 |
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$1.1400 / $1.3400 | Buy Now |
DISTI #
BSG0811NDATMA1
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Avnet Americas | Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$1.4255 | Buy Now |
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Ameya Holding Limited | Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4 | 22568 |
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RFQ |
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BSG0811NDATMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSG0811NDATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N7 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Case Connection | SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 19 A | |
Drain-source On Resistance-Max | 0.004 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N7 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSG0811NDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSG0811NDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSG0811ND | Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN | Infineon Technologies AG | BSG0811NDATMA1 vs BSG0811ND |