Datasheets
BSG0811NDATMA1 by:

Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN

Part Details for BSG0811NDATMA1 by Infineon Technologies AG

Overview of BSG0811NDATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Security and Surveillance Environmental Monitoring Internet of Things (IoT) Space Technology Smart Cities Aerospace and Defense Healthcare Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Medical Imaging Robotics and Drones

Price & Stock for BSG0811NDATMA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8343
Newark Mosfet, N-Ch, 25V, 50A, 150Deg C, 6.25W, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:50A, Continuous Drain Current Id P Channel:50A Rohs Compliant: Yes |Infineon BSG0811NDATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 162
  • 1 $2.8400
  • 10 $2.3600
  • 25 $2.2000
  • 50 $2.0400
  • 100 $1.8800
  • 250 $1.7400
  • 500 $1.5700
  • 1,000 $1.3500
$1.3500 / $2.8400 Buy Now
DISTI # BSG0811NDATMA1CT-ND
DigiKey MOSFET 2N-CH 25V 19A/41A TISON8 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 5476
In Stock
  • 1 $2.7400
  • 10 $2.2760
  • 100 $1.8113
  • 500 $1.5327
  • 1,000 $1.3005
  • 2,000 $1.2354
  • 5,000 $1.1890
$1.1890 / $2.7400 Buy Now
DISTI # BSG0811NDATMA1
Avnet Americas Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.4255
$1.4255 Buy Now
DISTI # 726-BSG0811NDATMA1
Mouser Electronics MOSFET TRENCH <= 40V RoHS: Compliant 261
  • 1 $2.6000
  • 10 $2.0700
  • 100 $1.7700
  • 250 $1.6900
  • 500 $1.4700
  • 1,000 $1.2400
  • 5,000 $1.1800
$1.1800 / $2.6000 Buy Now
DISTI # V72:2272_06383271
Arrow Electronics Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2236 Container: Cut Strips Americas - 407
  • 1 $1.7910
  • 10 $1.5940
  • 25 $1.5850
  • 100 $1.4370
  • 250 $1.2340
$1.2340 / $1.7910 Buy Now
Future Electronics Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel 0
Reel
  • 5,000 $1.1900
$1.1900 Buy Now
DISTI # 63378422
Verical Trans MOSFET N-CH 25V 31A/50A 8-Pin TISON EP T/R Min Qty: 5 Package Multiple: 1 Date Code: 2236 Americas - 407
  • 5 $1.7910
  • 10 $1.5940
  • 25 $1.5850
  • 100 $1.4370
  • 250 $1.2340
$1.2340 / $1.7910 Buy Now
Rochester Electronics BSG0811 -Dual N-Channel OptiMOS MOSFET RoHS: Compliant Status: Active Min Qty: 1 21
  • 1 $1.3400
  • 25 $1.3100
  • 100 $1.2600
  • 500 $1.2100
  • 1,000 $1.1400
$1.1400 / $1.3400 Buy Now
DISTI # BSG0811NDATMA1
Avnet Americas Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.4255
$1.4255 Buy Now
Ameya Holding Limited Dual N-Channel 25 V 3/0.8 mOhm 5.6/20 nC OptiMOS™ Power Mosfet - TISON8-4 22568
RFQ
DISTI # BSG0811NDATMA1
Avnet Americas Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0811NDATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $1.4255
$1.4255 Buy Now
DISTI # SP001075902
EBV Elektronik Trans MOSFET Array Dual N-CH 25V 19A/41A 10-Pin TISON8-4 T/R (Alt: SP001075902) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 3 Weeks, 0 Days EBV - 0
Buy Now
DISTI # 2726090
element14 Asia-Pacific MOSFET, DUAL N-CH, 25V, 50A, TISON RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $2.8572
  • 10 $2.3810
  • 100 $1.7510
  • 500 $1.5825
  • 1,000 $1.3627
$1.3627 / $2.8572 Buy Now
DISTI # 2726090RL
element14 Asia-Pacific MOSFET, DUAL N-CH, 25V, 50A, TISON RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $1.7510
  • 500 $1.5825
  • 1,000 $1.3627
$1.3627 / $1.7510 Buy Now
DISTI # 2726090RL
Farnell MOSFET, DUAL N-CH, 25V, 50A, TISON RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel 0
  • 100 $1.6736
  • 500 $1.4987
  • 1,000 $1.2465
$1.2465 / $1.6736 Buy Now
DISTI # 2726090
Farnell MOSFET, DUAL N-CH, 25V, 50A, TISON RoHS: Compliant Min Qty: 1 Lead time: 23 Weeks, 1 Days Container: Cut Tape 0
  • 1 $3.0849
  • 10 $2.2731
  • 100 $1.6736
  • 500 $1.4987
  • 1,000 $1.2465
$1.2465 / $3.0849 Buy Now
Perfect Parts Corporation   73
RFQ
Win Source Electronics MOSFET 2N-CH 25V 19A/41A 8TISON / Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 19A, 41A 2.5W Surface Mount PG-TISON-8 38299
  • 40 $1.2720
  • 100 $1.0440
  • 150 $1.0110
  • 205 $0.9790
  • 265 $0.9460
  • 355 $0.8480
$0.8480 / $1.2720 Buy Now

Part Details for BSG0811NDATMA1

BSG0811NDATMA1 CAD Models

BSG0811NDATMA1 Part Data Attributes

BSG0811NDATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSG0811NDATMA1 Infineon Technologies AG Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-N7
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 30 mJ
Case Connection SOURCE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 19 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N7
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 7
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSG0811NDATMA1

This table gives cross-reference parts and alternative options found for BSG0811NDATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSG0811NDATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSG0811ND Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN Infineon Technologies AG BSG0811NDATMA1 vs BSG0811ND

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