Datasheets
BSM200GA120DN2HOSA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

Part Details for BSM200GA120DN2HOSA1 by Infineon Technologies AG

Overview of BSM200GA120DN2HOSA1 by Infineon Technologies AG

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Part Details for BSM200GA120DN2HOSA1

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BSM200GA120DN2HOSA1 Part Data Attributes

BSM200GA120DN2HOSA1 Infineon Technologies AG
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BSM200GA120DN2HOSA1 Infineon Technologies AG Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code MODULE
Package Description MODULE-5
Pin Count 5
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 550 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE WITH BUILT-IN DIODE
JESD-30 Code R-XUFM-X5
Number of Elements 1
Number of Terminals 5
Operating Temperature-Max 150 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 630 ns
Turn-on Time-Nom (ton) 210 ns

Alternate Parts for BSM200GA120DN2HOSA1

This table gives cross-reference parts and alternative options found for BSM200GA120DN2HOSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM200GA120DN2HOSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSM200GA120DN2SHOSA1 Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GA120DN2HOSA1 vs BSM200GA120DN2SHOSA1
Part Number Description Manufacturer Compare
APTGT400U120D4 Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, MODULE-4 Microsemi Corporation BSM200GA120DN2HOSA1 vs APTGT400U120D4
BSM300GAL120DLCHOSA1 Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GA120DN2HOSA1 vs BSM300GAL120DLCHOSA1
C67070-A2302-A70 Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, Eupec Gmbh & Co Kg BSM200GA120DN2HOSA1 vs C67070-A2302-A70
FZ400R12KE4HOSA1 Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GA120DN2HOSA1 vs FZ400R12KE4HOSA1
APTGLQ300SK120G Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc BSM200GA120DN2HOSA1 vs APTGLQ300SK120G
BSM400GA120DLCS Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GA120DN2HOSA1 vs BSM400GA120DLCS
BSM400GA120DN2HOSA1 Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel, MODULE-5 Infineon Technologies AG BSM200GA120DN2HOSA1 vs BSM400GA120DN2HOSA1
APTGL475U120DAG Insulated Gate Bipolar Transistor, 610A I(C), 1200V V(BR)CES Microchip Technology Inc BSM200GA120DN2HOSA1 vs APTGL475U120DAG
BSM300GA120DLCSHOSA1 Insulated Gate Bipolar Transistor, MODULE-5 Infineon Technologies AG BSM200GA120DN2HOSA1 vs BSM300GA120DLCSHOSA1
APTGL475U120D4G Insulated Gate Bipolar Transistor, 610A I(C), 1200V V(BR)CES, N-Channel Microchip Technology Inc BSM200GA120DN2HOSA1 vs APTGL475U120D4G

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