Part Details for BSM20GD60DLCE3224 by Infineon Technologies AG
Overview of BSM20GD60DLCE3224 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for BSM20GD60DLCE3224
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BSM20GD60DLCE3224-ND
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DigiKey | IGBT MODULE Min Qty: 10 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
15 In Stock |
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$32.5000 | Buy Now |
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Rochester Electronics | BSM20GD60 - Insulated Gate Bipolar Transistor Module RoHS: Compliant Status: Obsolete Min Qty: 1 | 15 |
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$27.8900 / $32.8100 | Buy Now |
Part Details for BSM20GD60DLCE3224
BSM20GD60DLCE3224 CAD Models
BSM20GD60DLCE3224 Part Data Attributes
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BSM20GD60DLCE3224
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSM20GD60DLCE3224
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 32A I(C), 600V V(BR)CES, N-Channel, MODULE-17
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-17 | |
| Pin Count | 17 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 32 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X17 | |
| Number of Elements | 6 | |
| Number of Terminals | 17 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 146 ns | |
| Turn-on Time-Nom (ton) | 71 ns | |
| VCEsat-Max | 2.45 V |
Alternate Parts for BSM20GD60DLCE3224
This table gives cross-reference parts and alternative options found for BSM20GD60DLCE3224. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSM20GD60DLCE3224, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SK25GD063 | Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, CASE T 12, SEMITOP 3, 11 PIN | SEMIKRON | BSM20GD60DLCE3224 vs SK25GD063 |