Part Details for BSP297L6327 by Infineon Technologies AG
Overview of BSP297L6327 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSP297L6327
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | 141 |
|
RFQ | ||
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 0.66A I(D), 200V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 112 |
|
$1.2500 / $2.5000 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 0.66A I(D), 200V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 277 |
|
$298.5638 / $348.3244 | Buy Now |
|
|
Quest Components | POWER FIELD-EFFECT TRANSISTOR, 0.66A I(D), 200V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 159 |
|
$298.5638 / $348.3244 | Buy Now |
|
|
ComSIT USA | SIPMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1800 |
|
RFQ | |
|
DISTI #
1562500
|
element14 Asia-Pacific | MOSFET, N, LOGIC, REEL 1K RoHS: Compliant Min Qty: 1 Container: Reel | 0 |
|
$260.6121 / $267.7088 | Buy Now |
|
DISTI #
1562500
|
Farnell | MOSFET, N, LOGIC, REEL 1K RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Reel | 0 |
|
$283.2652 / $297.9386 | Buy Now |
Part Details for BSP297L6327
BSP297L6327 CAD Models
BSP297L6327 Part Data Attributes
|
|
BSP297L6327
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSP297L6327
Infineon Technologies AG
Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, PLASTIC PACKAGE-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 0.66 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 2.64 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for BSP297L6327
This table gives cross-reference parts and alternative options found for BSP297L6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP297L6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSP297 | Power Field-Effect Transistor, 0.6A I(D), 200V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN | Siemens | BSP297L6327 vs BSP297 |