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Transistors / Power Field-Effect Transistors / BSP613PH6327XTSA1
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BSP613PH6327XTSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Part Details for BSP613PH6327XTSA1 by Infineon Technologies AG

Overview of BSP613PH6327XTSA1 by Infineon Technologies AG

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Applications Consumer Electronics Security and Surveillance Audio and Video Systems Transportation and Logistics Energy and Power Systems Renewable Energy Automotive Robotics and Drones

Price & Stock for BSP613PH6327XTSA1

Part # Distributor Description Stock Price Buy
DISTI # 29X1531
Newark Mosfet Transistor, P Channel, -2.9 A, -60 V, 0.11 Ohm, -10 V, -3 V Rohs Compliant: Yes |Infineon BSP613PH6327XTSA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 19838
  • 1 $1.4000
  • 10 $1.1500
  • 100 $0.8980
  • 500 $0.7600
  • 1,000 $0.6200
  • 3,000 $0.5830
  • 10,000 $0.5290
$0.5290 / $1.4000 Buy Now
DISTI # BSP613PH6327XTSA1CT-ND
DigiKey MOSFET P-CH 60V 2.9A SOT223-4 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 6109
In Stock
  • 1 $1.2200
  • 10 $0.9990
  • 100 $0.7769
  • 500 $0.6585
  • 1,000 $0.5364
  • 2,000 $0.5050
  • 5,000 $0.4809
  • 10,000 $0.4587
$0.4587 / $1.2200 Buy Now
DISTI # BSP613PH6327XTSA1
Avnet Americas Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP613PH6327XTSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.5038
  • 2,000 $0.4885
  • 4,000 $0.4732
  • 6,000 $0.4580
  • 8,000 $0.4427
  • 10,000 $0.4274
  • 100,000 $0.4122
$0.4122 / $0.5038 Buy Now
DISTI # 726-BSP613PH6327XTSA
Mouser Electronics MOSFET P-Ch -60V -2.9A SOT-223-3 RoHS: Compliant 3629
  • 1 $1.2200
  • 10 $0.9990
  • 100 $0.7000
  • 500 $0.6590
  • 1,000 $0.5360
  • 2,000 $0.5040
  • 5,000 $0.4880
  • 10,000 $0.4580
$0.4580 / $1.2200 Buy Now
Future Electronics Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 6000
Reel
  • 1,000 $0.5100
  • 2,000 $0.4950
  • 3,000 $0.4900
  • 4,000 $0.4850
  • 5,000 $0.4700
$0.4700 / $0.5100 Buy Now
Future Electronics Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 3000
Reel
  • 1,000 $0.5100
  • 2,000 $0.4950
  • 3,000 $0.4900
  • 4,000 $0.4850
  • 5,000 $0.4700
$0.4700 / $0.5100 Buy Now
Future Electronics Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Small Signal Mosfet - SOT-223 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $0.5550
  • 2,000 $0.5450
  • 3,000 $0.5350
  • 4,000 $0.5300
  • 5,000 $0.5150
$0.5150 / $0.5550 Buy Now
DISTI # BSP613PH6327XTSA1
Avnet Americas Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP613PH6327XTSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.5038
  • 2,000 $0.4885
  • 4,000 $0.4732
  • 6,000 $0.4580
  • 8,000 $0.4427
  • 10,000 $0.4274
  • 100,000 $0.4122
$0.4122 / $0.5038 Buy Now
DISTI # BSP613PH6327XTSA1
TME Transistor: P-MOSFET, unipolar, -60V, -2.9A, 1.8W, PG-SOT223 Min Qty: 1 1187
  • 1 $1.1000
  • 5 $0.8500
  • 25 $0.7400
  • 100 $0.6900
  • 500 $0.6400
$0.6400 / $1.1000 Buy Now
Ameya Holding Limited Transistor: P-MOSFET, unipolar, -60V, -2.9A, 1.8W, PG-SOT223 1814
RFQ
DISTI # BSP613PH6327XTSA1
Avnet Americas Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP613PH6327XTSA1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 1,000 $0.5038
  • 2,000 $0.4885
  • 4,000 $0.4732
  • 6,000 $0.4580
  • 8,000 $0.4427
  • 10,000 $0.4274
  • 100,000 $0.4122
$0.4122 / $0.5038 Buy Now
CHIPMALL.COM LIMITED Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting , ADAS , body control units , SMPS and motor control . 815
  • 1 $0.6121
  • 100 $0.5968
$0.5968 / $0.6121 Buy Now
DISTI # SP001058788
EBV Elektronik Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R (Alt: SP001058788) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 3 Weeks, 0 Days EBV - 332000
Buy Now
DISTI # 2377261
element14 Asia-Pacific MOSFET, P-CH, -60V, -2.9A, SOT-223-4 RoHS: Compliant Min Qty: 1 Container: Each 19838
  • 1 $1.4678
  • 10 $1.2036
  • 100 $0.9394
  • 500 $0.8073
  • 1,000 $0.6355
  • 5,000 $0.6231
$0.6231 / $1.4678 Buy Now
DISTI # 2377261
Farnell MOSFET, P-CH, -60V, -2.9A, SOT-223-4 RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 19838
  • 1 $1.5985
  • 10 $1.2088
  • 100 $0.8979
  • 500 $0.7593
  • 1,000 $0.6744
  • 5,000 $0.5894
$0.5894 / $1.5985 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 1000 7000
  • 1,000 $0.4500
  • 7,000 $0.4200
$0.4200 / $0.4500 Buy Now
Win Source Electronics MOSFET P-CH 60V 2.9A SOT-223 247788
  • 45 $1.2160
  • 105 $0.9980
  • 160 $0.9660
  • 215 $0.9350
  • 280 $0.9040
  • 370 $0.8110
$0.8110 / $1.2160 Buy Now

Part Details for BSP613PH6327XTSA1

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BSP613PH6327XTSA1 Part Data Attributes

Parametric Data
BSP613PH6327XTSA1 Infineon Technologies AG
Buy Now Datasheet
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BSP613PH6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 2.9 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 120 pF
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 1.8 W
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 11.6 A
Reference Standard AEC-Q101; IEC-61249-2-21; IEC-68-1
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 71 ns
Turn-on Time-Max (ton) 35 ns

Alternate Parts for BSP613PH6327XTSA1

This table gives cross-reference parts and alternative options found for BSP613PH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP613PH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSP613PL6327HUSA1 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP613PH6327XTSA1 vs BSP613PL6327HUSA1
BSP613PH6327 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP613PH6327XTSA1 vs BSP613PH6327
ZXMP6A17GQTA Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Diodes Incorporated BSP613PH6327XTSA1 vs ZXMP6A17GQTA
BSP613PL6327 Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG BSP613PH6327XTSA1 vs BSP613PL6327
ZXMP6A17GQTC Power Field-Effect Transistor, Diodes Incorporated BSP613PH6327XTSA1 vs ZXMP6A17GQTC

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