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Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
38AH7659
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Newark | Small Signal Mosfets Rohs Compliant: Yes |Infineon BSS123NH6327XTSA1 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 117000 |
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$0.0460 | Buy Now |
DISTI #
22AC2923
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Newark | Mosfet, N-Ch, 100V, 0.19A, 150Deg C/0.5W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:190Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Infineon BSS123NH6327XTSA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 200959 |
|
$0.1090 / $0.4350 | Buy Now |
DISTI #
86AK4525
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Newark | Mosfet, N-Ch, 100V, 0.19A, Sot-23 Rohs Compliant: Yes |Infineon BSS123NH6327XTSA1 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.0620 / $0.0750 | Buy Now |
DISTI #
BSS123NH6327XTSA1CT-ND
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DigiKey | MOSFET N-CH 100V 190MA SOT23-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
230180 In Stock |
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$0.0441 / $0.3700 | Buy Now |
DISTI #
BSS123NH6327XTSA1
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Avnet Americas | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS123NH6327XTSA1) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 117000 |
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$0.0398 / $0.0454 | Buy Now |
DISTI #
BSS123NH6327XTSA1
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Avnet Americas | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS123NH6327XTSA1) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 48 Weeks, 0 Days Container: Reel | 0 |
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$0.0398 / $0.0454 | Buy Now |
DISTI #
22AC2923
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Avnet Americas | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 22AC2923) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 31039 Partner Stock |
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$0.1300 / $0.4350 | Buy Now |
DISTI #
726-BSS123NH6327XTSA
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Mouser Electronics | MOSFET N-Ch 100V 190mA SOT-23-3 RoHS: Compliant | 757228 |
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$0.0440 / $0.3700 | Buy Now |
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Future Electronics | Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS™ Small Signal Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 639000Reel |
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$0.0376 / $0.0424 | Buy Now |
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Future Electronics | Single N-Channel 100V 6 Ohm 0.6 nC OptiMOS™ Small Signal Mosfet - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 234000Reel |
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$0.0376 / $0.0424 | Buy Now |
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BSS123NH6327XTSA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
BSS123NH6327XTSA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 48 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.19 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3.1 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |