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Part Details for BSZ096N10LS5ATMA1 by Infineon Technologies AG
Overview of BSZ096N10LS5ATMA1 by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ096N10LS5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39AH8785
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Newark | Mosfet, N-Ch, 100V, 40A, 150Deg C, 69W, Transistor Polarity:N Channel, Continuous Drain Current Id:40A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0082Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Infineon BSZ096N10LS5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.8910 / $1.8800 | Buy Now |
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DISTI #
448-BSZ096N10LS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 100V 40A TSDSON Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
10335 In Stock |
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$0.7576 / $1.8100 | Buy Now |
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DISTI #
BSZ096N10LS5ATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ096N10LS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.7071 / $0.8082 | Buy Now |
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DISTI #
726-BSZ096N10LS5ATMA
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 36318 |
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$0.7410 / $1.8100 | Buy Now |
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Future Electronics | N-Channel 100 V 40 A 69 W Surface Mount Mosfet - PG-TSDSON-8-FL RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.7600 | Buy Now |
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Future Electronics | N-Channel 100 V 40 A 69 W Surface Mount Mosfet - PG-TSDSON-8-FL RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.7600 | Buy Now |
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Rochester Electronics | Trench >=100V RoHS: Compliant Status: Active Min Qty: 1 | 69700 |
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$0.7513 / $0.8839 | Buy Now |
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DISTI #
BSZ096N10LS5ATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ096N10LS5ATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 5000 |
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$0.7071 / $0.8082 | Buy Now |
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Ameya Holding Limited | Min Qty: 5000 | 9870 |
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$1.0281 / $1.0601 | Buy Now |
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Ameya Holding Limited | 18159 |
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RFQ |
Part Details for BSZ096N10LS5ATMA1
BSZ096N10LS5ATMA1 CAD Models
BSZ096N10LS5ATMA1 Part Data Attributes
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BSZ096N10LS5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ096N10LS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 100V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, S-PDSO-N3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 82 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0096 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSZ096N10LS5ATMA1
This table gives cross-reference parts and alternative options found for BSZ096N10LS5ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ096N10LS5ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC098N10NS5ATMA1 | Power Field-Effect Transistor, 11A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSZ096N10LS5ATMA1 vs BSC098N10NS5ATMA1 |
| FDI3632 | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AB, ROHS COMPLIANT PACKAGE-3 | Fairchild Semiconductor Corporation | BSZ096N10LS5ATMA1 vs FDI3632 |