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Part Details for BUK7613-100E,118 by Nexperia
Overview of BUK7613-100E,118 by Nexperia
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Consumer Electronics
Industrial Automation
Energy and Power Systems
Electronic Manufacturing
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Price & Stock for BUK7613-100E,118
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
53W8640
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Newark | Mosfet Transistor, N Channel, 72 A, 100 V, 0.0102 Ohm, 10 V, 3 V Rohs Compliant: Yes |Nexperia BUK7613-100E,118 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
1727-1087-1-ND
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DigiKey | MOSFET N-CH 100V 72A D2PAK Min Qty: 1 Lead time: 52 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
6370 In Stock |
|
$0.9843 / $2.2700 | Buy Now |
|
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Future Electronics | Standard level N-channel MOSFET TrenchMOS - SOT404 RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
|
$0.9800 / $1.0200 | Buy Now |
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DISTI #
2254186
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element14 Asia-Pacific | MOSFET, N-CH, 100V, 72A, D2PAK RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$1.5412 / $2.4145 | Buy Now |
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DISTI #
2254186
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Farnell | MOSFET, N-CH, 100V, 72A, D2PAK RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each | 0 |
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$1.4361 / $2.6974 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 800 | 1600 |
|
$1.3100 / $1.4000 | Buy Now |
Part Details for BUK7613-100E,118
BUK7613-100E,118 CAD Models
BUK7613-100E,118 Part Data Attributes
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BUK7613-100E,118
Nexperia
Buy Now
Datasheet
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Compare Parts:
BUK7613-100E,118
Nexperia
N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3/2 | |
| Pin Count | 3 | |
| Manufacturer Package Code | SOT404 | |
| Reach Compliance Code | not_compliant | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 121 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 72 A | |
| Drain-source On Resistance-Max | 0.013 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 288 A | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |