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Part Details for BUK9Y11-30B,115 by Nexperia
Overview of BUK9Y11-30B,115 by Nexperia
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Price & Stock for BUK9Y11-30B,115
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
73AH9805
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Newark | Mosfet, Aec-Q101, N-Ch, 30V, 59A, Lfpak56 Rohs Compliant: Yes |Nexperia BUK9Y11-30B,115 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.3090 / $0.7300 | Buy Now |
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Rochester Electronics | TRANSISTOR >30MHZ RoHS: Compliant Status: Obsolete Min Qty: 1 | 1960 |
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$0.2983 / $0.3509 | Buy Now |
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DISTI #
3439711
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Farnell | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 500 |
|
$0.3393 / $0.7012 | Buy Now |
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DISTI #
3439711RL
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Farnell | RoHS: Compliant Min Qty: 100 Container: Reel | 500 |
|
$0.3393 / $0.4964 | Buy Now |
Part Details for BUK9Y11-30B,115
BUK9Y11-30B,115 CAD Models
BUK9Y11-30B,115 Part Data Attributes
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BUK9Y11-30B,115
Nexperia
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Datasheet
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BUK9Y11-30B,115
Nexperia
BUK9Y11-30B - N-channel TrenchMOS logic level FET@en-us SOIC 4-Pin
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Part Package Code | SOIC | |
| Package Description | LFPAK-4 | |
| Pin Count | 4 | |
| Manufacturer Package Code | SOT669 | |
| Reach Compliance Code | not_compliant | |
| Samacsys Manufacturer | Nexperia | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 112 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 239 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |