Part Details for BUK9Y11-30B by Nexperia
Overview of BUK9Y11-30B by Nexperia
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Part Details for BUK9Y11-30B
BUK9Y11-30B CAD Models
BUK9Y11-30B Part Data Attributes
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BUK9Y11-30B
Nexperia
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BUK9Y11-30B
Nexperia
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Date Of Intro | 2017-02-01 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 112 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-235 | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 239 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |