Part Details for BUY25CS12J01ESZZZA1 by Infineon Technologies AG
Overview of BUY25CS12J01ESZZZA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for BUY25CS12J01ESZZZA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000880882
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EBV Elektronik | Trans MOSFET N-CH 250V 12.4A 3-Pin SMD-0.5 (Alt: SP000880882) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 3 Weeks, 5 Days | EBV - 0 |
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Part Details for BUY25CS12J01ESZZZA1
BUY25CS12J01ESZZZA1 CAD Models
BUY25CS12J01ESZZZA1 Part Data Attributes:
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BUY25CS12J01ESZZZA1
Infineon Technologies AG
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Datasheet
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BUY25CS12J01ESZZZA1
Infineon Technologies AG
Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-XBCC-N3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 60 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 12.4 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 6 pF | |
| JESD-30 Code | R-XBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 50 A | |
| Reference Standard | ESA/SCC 5205/026; RH - 100K Rad(Si) | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 55 ns | |
| Turn-on Time-Max (ton) | 50 ns |