Part Details for BUZ100S by Infineon Technologies AG
Overview of BUZ100S by Infineon Technologies AG
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Audio and Video Systems
Price & Stock for BUZ100S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-BUZ100S-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 547 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
2483 In Stock |
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$0.5500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 61960 |
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$0.5300 / $1.7665 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 444 |
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$0.7066 / $1.7665 | Buy Now |
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Rochester Electronics | BUZ100 - Power Field-Effect Transistor, 77A, 55V, 0.015ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 2483 |
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$0.4711 / $0.5542 | Buy Now |
Part Details for BUZ100S
BUZ100S CAD Models
BUZ100S Part Data Attributes
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BUZ100S
Infineon Technologies AG
Buy Now
Datasheet
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BUZ100S
Infineon Technologies AG
Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 380 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 77 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 308 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |