Datasheets
BUZ101L by:

Power Field-Effect Transistor, 29A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for BUZ101L by Infineon Technologies AG

Overview of BUZ101L by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for BUZ101L

Part # Distributor Description Stock Price Buy
DISTI # 2156-BUZ101L-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 1039 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 5075
In Stock
  • 1,039 $0.2900
$0.2900 Buy Now
Rochester Electronics BUZ101 - Power Field-Effect Transistor, 29A, 50V, 0.06ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 5075
  • 1 $0.2917
  • 25 $0.2859
  • 100 $0.2742
  • 500 $0.2625
  • 1,000 $0.2479
$0.2479 / $0.2917 Buy Now

Part Details for BUZ101L

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BUZ101L Part Data Attributes

BUZ101L Infineon Technologies AG
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BUZ101L Infineon Technologies AG Power Field-Effect Transistor, 29A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 70 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 29 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 116 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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