Datasheets
BUZ101S by:

Power Field-Effect Transistor, 23A I(D), 55V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for BUZ101S by Siemens

Overview of BUZ101S by Siemens

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for BUZ101S

Part # Distributor Description Stock Price Buy
ComSIT USA SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 22A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant Europe - 938
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Part Details for BUZ101S

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BUZ101S Part Data Attributes

BUZ101S Siemens
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BUZ101S Siemens Power Field-Effect Transistor, 23A I(D), 55V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SFM
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

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