Datasheets
BUZ101SL by:

Power Field-Effect Transistor, 20A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for BUZ101SL by Infineon Technologies AG

Overview of BUZ101SL by Infineon Technologies AG

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for BUZ101SL

Part # Distributor Description Stock Price Buy
Quest Components 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 14198
  • 1 $1.1250
  • 1,708 $0.4125
  • 3,637 $0.3938
$0.3938 / $1.1250 Buy Now
Quest Components 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 15540
  • 1 $1.8750
  • 1,068 $0.6563
  • 2,287 $0.5625
$0.5625 / $1.8750 Buy Now
Quest Components 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 1520
  • 1 $1.8750
  • 214 $0.7500
  • 1,068 $0.6563
$0.6563 / $1.8750 Buy Now

Part Details for BUZ101SL

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BUZ101SL Part Data Attributes

BUZ101SL Infineon Technologies AG
Buy Now Datasheet
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BUZ101SL Infineon Technologies AG Power Field-Effect Transistor, 20A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas) 90 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 80 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUZ101SL

This table gives cross-reference parts and alternative options found for BUZ101SL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ101SL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ101SL Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Siemens BUZ101SL vs BUZ101SL
Part Number Description Manufacturer Compare
HUF75309D3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Fairchild Semiconductor Corporation BUZ101SL vs HUF75309D3
BUZ10 19.3A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited BUZ101SL vs BUZ10
HUFA76409D3 Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Fairchild Semiconductor Corporation BUZ101SL vs HUFA76409D3
BUZ71 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Vishay Siliconix BUZ101SL vs BUZ71
MTD1N50E1 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi BUZ101SL vs MTD1N50E1
FQD24N08 Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation BUZ101SL vs FQD24N08
HUF75309P3_NL Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation BUZ101SL vs HUF75309P3_NL
IRFR1205TRLPBF Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG BUZ101SL vs IRFR1205TRLPBF
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation BUZ101SL vs IRFZ30
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUZ101SL vs RFD14N06L

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