Part Details for BUZ101SL by Infineon Technologies AG
Overview of BUZ101SL by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BUZ101SL
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 14198 |
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$0.3938 / $1.1250 | Buy Now |
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Quest Components | 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 15540 |
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$0.5625 / $1.8750 | Buy Now |
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Quest Components | 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 1520 |
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$0.6563 / $1.8750 | Buy Now |
Part Details for BUZ101SL
BUZ101SL CAD Models
BUZ101SL Part Data Attributes
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BUZ101SL
Infineon Technologies AG
Buy Now
Datasheet
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BUZ101SL
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 55 W | |
Pulsed Drain Current-Max (IDM) | 80 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ101SL
This table gives cross-reference parts and alternative options found for BUZ101SL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ101SL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BUZ101SL | Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | Siemens | BUZ101SL vs BUZ101SL |