Datasheets
BUZ101SL by:

Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for BUZ101SL by Siemens

Overview of BUZ101SL by Siemens

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Applications Consumer Electronics Audio and Video Systems

Price & Stock for BUZ101SL

Part # Distributor Description Stock Price Buy
Quest Components 20 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 1425
  • 1 $1.1250
  • 75 $0.5250
  • 382 $0.4688
$0.4688 / $1.1250 Buy Now

Part Details for BUZ101SL

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BUZ101SL Part Data Attributes

BUZ101SL Siemens
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BUZ101SL Siemens Power Field-Effect Transistor, 21A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUZ101SL

This table gives cross-reference parts and alternative options found for BUZ101SL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ101SL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ101SL Power Field-Effect Transistor, 20A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN Infineon Technologies AG BUZ101SL vs BUZ101SL
Part Number Description Manufacturer Compare
HUFA76409P3 18A, 60V, 0.074ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation BUZ101SL vs HUFA76409P3
RFD14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, 3 PIN Fairchild Semiconductor Corporation BUZ101SL vs RFD14N05L
934055349118 TRANSISTOR 19 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3, FET General Purpose Power NXP Semiconductors BUZ101SL vs 934055349118
HUF76419D3S 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation BUZ101SL vs HUF76419D3S
HUFA76409D3S 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation BUZ101SL vs HUFA76409D3S
HUFA75309D3 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUZ101SL vs HUFA75309D3
PHD20N06T,118 PHD20N06T - N-channel TrenchMOS standard level FET DPAK 3-Pin NXP Semiconductors BUZ101SL vs PHD20N06T,118
HUF76409D3S 17A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation BUZ101SL vs HUF76409D3S
HUF76413D3 20A, 60V, 0.061ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation BUZ101SL vs HUF76413D3
IRFIZ34GPBF Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3 International Rectifier BUZ101SL vs IRFIZ34GPBF

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