Part Details for BUZ80FI by STMicroelectronics
Overview of BUZ80FI by STMicroelectronics
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for BUZ80FI
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 2 | 1000 |
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$1.1021 / $2.6880 | Buy Now |
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Quest Components | 2.1 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 16 |
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$1.5000 / $1.8750 | Buy Now |
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Quest Components | 2.1 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 800 |
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$1.5600 / $3.6000 | Buy Now |
Part Details for BUZ80FI
BUZ80FI CAD Models
BUZ80FI Part Data Attributes
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BUZ80FI
STMicroelectronics
Buy Now
Datasheet
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BUZ80FI
STMicroelectronics
2.1A, 800V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ISOWATT220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | ISOWATT220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 2.1 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 40 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 40 W | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 13 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-on Time-Max (ton) | 160 ns |