Part Details for CM450HA-5F by Mitsubishi Electric
Overview of CM450HA-5F by Mitsubishi Electric
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Education and Research
Aerospace and Defense
Communication and Networking
Price & Stock for CM450HA-5F
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
52F1384
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Newark | Igbt Module, 250V, 450A, Continuous Collector Current:450A, Collector Emitter Saturation Voltage:250V, Power Dissipation:735W, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:250V, Product Range:-Rohs Compliant: No |Mitsubishi Electric CM450HA-5F Min Qty: 10 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for CM450HA-5F
CM450HA-5F CAD Models
CM450HA-5F Part Data Attributes:
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CM450HA-5F
Mitsubishi Electric
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Datasheet
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CM450HA-5F
Mitsubishi Electric
Insulated Gate Bipolar Transistor, 450A I(C), 250V V(BR)CES, N-Channel,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MITSUBISHI ELECTRIC CORP | |
Package Description | FLANGE MOUNT, R-XUFM-X4 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | SUPER FAST RECOVERY | |
Case Connection | ISOLATED | |
Collector Current-Max (IC) | 450 A | |
Collector-Emitter Voltage-Max | 250 V | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
JESD-30 Code | R-XUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | POWER CONTROL | |
Transistor Element Material | SILICON | |
Turn-off Time-Nom (toff) | 1400 ns | |
Turn-on Time-Nom (ton) | 3900 ns | |
VCEsat-Max | 2.8 V |