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Part Details for CSD13302WT by Texas Instruments
Overview of CSD13302WT by Texas Instruments
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for CSD13302WT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-CSD13302WTCT-ND
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DigiKey | MOSFET N-CH 12V 1.6A 4DSBGA Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
322 In Stock |
|
$0.3513 / $0.9400 | Buy Now |
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DISTI #
595-CSD13302WT
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Mouser Electronics | MOSFET 12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA -55 to 150 RoHS: Compliant | 0 |
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$0.3510 / $0.9400 | Order Now |
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Rochester Electronics | CSD13302W 12V, N Channel NexFET MOSFET, single WLP 1.0x1.0, 17.1mOhm RoHS: Compliant Status: Active Min Qty: 1 | 500 |
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$0.3483 / $0.4098 | Buy Now |
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DISTI #
CSD13302WT
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TME | Transistor: N-MOSFET, unipolar, 12V, 1.6A, Idm: 29A, 1.8W, DSBGA4 Min Qty: 1 | 0 |
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$0.4990 / $0.8200 | RFQ |
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Ameya Holding Limited | 2500 |
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RFQ |
Part Details for CSD13302WT
CSD13302WT CAD Models
CSD13302WT Part Data Attributes
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CSD13302WT
Texas Instruments
Buy Now
Datasheet
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CSD13302WT
Texas Instruments
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | DSBGA-4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 1.6 A | |
| Drain-source On Resistance-Max | 0.0258 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 196 pF | |
| JESD-30 Code | S-PBGA-B4 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.8 W | |
| Pulsed Drain Current-Max (IDM) | 29 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD13302WT
This table gives cross-reference parts and alternative options found for CSD13302WT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD13302WT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CSD13302W | 12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA | Texas Instruments | CSD13302WT vs CSD13302W |