Datasheets
CSD17552Q3A by:

30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6 mOhm 8-VSONP -55 to 150

Part Details for CSD17552Q3A by Texas Instruments

Overview of CSD17552Q3A by Texas Instruments

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Applications Industrial Automation Motor control systems

Price & Stock for CSD17552Q3A

Part # Distributor Description Stock Price Buy
DISTI # 296-34990-1-ND
DigiKey MOSFET N-CH 30V 15A/60A 8SON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 7037
In Stock
  • 1 $0.9300
  • 10 $0.7610
  • 100 $0.5918
  • 500 $0.5016
  • 1,000 $0.4086
  • 2,500 $0.3846
  • 5,000 $0.3663
  • 12,500 $0.3494
  • 25,000 $0.3488
$0.3488 / $0.9300 Buy Now
DISTI # 595-CSD17552Q3A
Mouser Electronics MOSFET 30V N-Channel MOSFET RoHS: Compliant 16362
  • 1 $0.9300
  • 10 $0.7610
  • 100 $0.5910
  • 500 $0.5010
  • 1,000 $0.4080
  • 2,500 $0.3840
  • 5,000 $0.3660
  • 10,000 $0.3490
$0.3490 / $0.9300 Buy Now
Bristol Electronics   2500
RFQ
Ameya Holding Limited CSD17552Q3A , N沟道 MOSFET 晶体管, 74 A, Vds=30 V, 8针 VSON封装 159182
RFQ

Part Details for CSD17552Q3A

CSD17552Q3A CAD Models

CSD17552Q3A Part Data Attributes

CSD17552Q3A Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD17552Q3A Texas Instruments 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6 mOhm 8-VSONP -55 to 150
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 45 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 74 A
Drain-source On Resistance-Max 0.0081 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 36 pF
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.6 W
Pulsed Drain Current-Max (IDM) 84 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD17552Q3A

This table gives cross-reference parts and alternative options found for CSD17552Q3A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17552Q3A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD17552Q3AT 15A, 30V, 0.0081ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, VSON-8 Texas Instruments CSD17552Q3A vs CSD17552Q3AT
NVTFS4C10NWFTAG Single N-Channel Power MOSFET 30V, 47A, 7.4mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, 1500-REEL, Automotive Qualified onsemi CSD17552Q3A vs NVTFS4C10NWFTAG
Part Number Description Manufacturer Compare
FDMS8880 Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN Fairchild Semiconductor Corporation CSD17552Q3A vs FDMS8880
NVTFS4C10NWFTAG Single N-Channel Power MOSFET 30V, 47A, 7.4mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, 1500-REEL, Automotive Qualified onsemi CSD17552Q3A vs NVTFS4C10NWFTAG
FDMS8880 N-Channel PowerTrench® MOSFET 30V, 21A, 8.5mΩ, 3000-REEL onsemi CSD17552Q3A vs FDMS8880

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