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30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-34990-1-ND
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DigiKey | MOSFET N-CH 30V 15A/60A 8SON Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7037 In Stock |
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$0.3488 / $0.9300 | Buy Now |
DISTI #
595-CSD17552Q3A
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Mouser Electronics | MOSFET 30V N-Channel MOSFET RoHS: Compliant | 16362 |
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$0.3490 / $0.9300 | Buy Now |
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Bristol Electronics | 2500 |
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RFQ | ||
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Ameya Holding Limited | CSD17552Q3A , N沟道 MOSFET 晶体管, 74 A, Vds=30 V, 8针 VSON封装 | 159182 |
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RFQ |
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CSD17552Q3A
Texas Instruments
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Datasheet
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CSD17552Q3A
Texas Instruments
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6 mOhm 8-VSONP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 45 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 74 A | |
Drain-source On Resistance-Max | 0.0081 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 36 pF | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.6 W | |
Pulsed Drain Current-Max (IDM) | 84 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD17552Q3A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD17552Q3A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD17552Q3AT | 15A, 30V, 0.0081ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, VSON-8 | Texas Instruments | CSD17552Q3A vs CSD17552Q3AT |
NVTFS4C10NWFTAG | Single N-Channel Power MOSFET 30V, 47A, 7.4mΩ 1500 / Tape & Reel. Pb-Free, Wettable Flanks, 1500-REEL, Automotive Qualified | onsemi | CSD17552Q3A vs NVTFS4C10NWFTAG |