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60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-36445-1-ND
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DigiKey | MOSFET N-CH 60V 22A/100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) |
4353 In Stock |
|
$1.0594 / $2.4400 | Buy Now |
DISTI #
595-CSD18532NQ5B
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Mouser Electronics | MOSFET 60V NCh NexFET Power MOSFET RoHS: Compliant | 3033 |
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$1.0500 / $2.4100 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 60V 22A 8VSON | 9213 |
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RFQ | |
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Chip1Cloud | MOSFET N-CH 60V 22A/100A 8VSON | 65000 |
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RFQ | |
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LCSC | SON-8(5x6) MOSFETs ROHS | 10 |
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$1.0931 / $1.6325 | Buy Now |
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CSD18532NQ5B
Texas Instruments
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Datasheet
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CSD18532NQ5B
Texas Instruments
60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | VSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 360 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 21 pF | |
JESD-30 Code | R-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 156 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD18532NQ5B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18532NQ5B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFH5006TRPBF | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | Infineon Technologies AG | CSD18532NQ5B vs IRFH5006TRPBF |
IRFH5006TRPBF | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | CSD18532NQ5B vs IRFH5006TRPBF |
IRFH5006TR2PBF | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | CSD18532NQ5B vs IRFH5006TR2PBF |
CSD18532NQ5BT | 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 | Texas Instruments | CSD18532NQ5B vs CSD18532NQ5BT |