Datasheets
CSD18532NQ5B by:

60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150

Part Details for CSD18532NQ5B by Texas Instruments

Overview of CSD18532NQ5B by Texas Instruments

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Price & Stock for CSD18532NQ5B

Part # Distributor Description Stock Price Buy
DISTI # 296-36445-1-ND
DigiKey MOSFET N-CH 60V 22A/100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) 4353
In Stock
  • 1 $2.4400
  • 10 $2.0280
  • 100 $1.6140
  • 500 $1.3657
  • 1,000 $1.1588
  • 2,500 $1.1008
  • 5,000 $1.0594
$1.0594 / $2.4400 Buy Now
DISTI # 595-CSD18532NQ5B
Mouser Electronics MOSFET 60V NCh NexFET Power MOSFET RoHS: Compliant 3033
  • 1 $2.4100
  • 10 $2.0100
  • 100 $1.6000
  • 250 $1.5300
  • 500 $1.3500
  • 1,000 $1.1500
  • 2,500 $1.0900
  • 5,000 $1.0500
$1.0500 / $2.4100 Buy Now
Ameya Holding Limited MOSFET N-CH 60V 22A 8VSON 9213
RFQ
Chip1Cloud MOSFET N-CH 60V 22A/100A 8VSON 65000
RFQ
LCSC SON-8(5x6) MOSFETs ROHS 10
  • 1 $1.6325
  • 10 $1.4252
  • 30 $1.3016
  • 100 $1.1768
  • 500 $1.1187
  • 1,000 $1.0931
$1.0931 / $1.6325 Buy Now

Part Details for CSD18532NQ5B

CSD18532NQ5B CAD Models

CSD18532NQ5B Part Data Attributes:

CSD18532NQ5B Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD18532NQ5B Texas Instruments 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description VSON-8
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 360 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0044 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 21 pF
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD18532NQ5B

This table gives cross-reference parts and alternative options found for CSD18532NQ5B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD18532NQ5B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 Infineon Technologies AG CSD18532NQ5B vs IRFH5006TRPBF
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TRPBF
IRFH5006TR2PBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TR2PBF
CSD18532NQ5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532NQ5BT
Part Number Description Manufacturer Compare
IRFH5006TR2PBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TR2PBF
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier CSD18532NQ5B vs IRFH5006TRPBF
CSD18532Q5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532Q5BT
CSD18532Q5B 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.2 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532Q5B
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 Infineon Technologies AG CSD18532NQ5B vs IRFH5006TRPBF
CSD18532NQ5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments CSD18532NQ5B vs CSD18532NQ5BT

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