Part Details for CSD19505KTTT by Texas Instruments
Overview of CSD19505KTTT by Texas Instruments
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for CSD19505KTTT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
296-CSD19505KTTTCT-ND
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DigiKey | MOSFET N-CH 80V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
118 In Stock |
|
$1.9800 / $4.2400 | Buy Now |
|
DISTI #
595-CSD19505KTTT
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Mouser Electronics | MOSFET 80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm 2-DDPAK/TO-263 -55 to 175 RoHS: Compliant | 0 |
|
$2.0600 / $4.2400 | Order Now |
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DISTI #
CSD19505KTTT
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TME | Transistor: N-MOSFET, unipolar, 80V, 200A, Idm: 400A, 300W, D2PAK Min Qty: 1 | 0 |
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$2.6800 / $4.0200 | RFQ |
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Ameya Holding Limited | 5350 |
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RFQ |
Part Details for CSD19505KTTT
CSD19505KTTT CAD Models
CSD19505KTTT Part Data Attributes
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CSD19505KTTT
Texas Instruments
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Datasheet
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Compare Parts:
CSD19505KTTT
Texas Instruments
80-V, N channel NexFET™ power MOSFET, single D2PAK, 3.1 mOhm 2-DDPAK/TO-263 -55 to 175
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| Pbfree Code | Yes | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | D2PAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2016-03-16 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 510 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 212 A | |
| Drain-source On Resistance-Max | 0.0038 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 34 pF | |
| JESD-30 Code | R-PSSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 2 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for CSD19505KTTT
This table gives cross-reference parts and alternative options found for CSD19505KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19505KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFSL3107PBF | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTTT vs IRFSL3107PBF |
| IRFSL3107TRLPBF | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTTT vs IRFSL3107TRLPBF |
| AUIRFSL3107 | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | International Rectifier | CSD19505KTTT vs AUIRFSL3107 |
| AUIRFSL3107 | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTTT vs AUIRFSL3107 |
| IRFSL3107TRRPBF | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | CSD19505KTTT vs IRFSL3107TRRPBF |
| IRFSL3107 | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | International Rectifier | CSD19505KTTT vs IRFSL3107 |
| CSD19506KTT | 80-V, N channel NexFET™ power MOSFET, single D2PAK, 2.3 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | CSD19505KTTT vs CSD19506KTT |