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100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-43211-1-ND
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DigiKey | MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
9847 In Stock |
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$1.2862 / $1.9400 | Buy Now |
DISTI #
595-CSD19532KTTT
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Mouser Electronics | MOSFET 100V, N-channel NexFET Pwr MOSFET RoHS: Compliant | 19140 |
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$1.2700 / $1.8100 | Buy Now |
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Bristol Electronics | 100 |
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RFQ | ||
DISTI #
CSD19532KTTT
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TME | Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 250W, D2PAK Min Qty: 1 | 439 |
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$1.6600 / $2.6500 | Buy Now |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 200A, 250W, D2PAK | 54925 |
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RFQ |
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CSD19532KTTT
Texas Instruments
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Datasheet
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CSD19532KTTT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 259 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 136 A | |
Drain-source On Resistance-Max | 0.0066 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 18 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19532KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19532KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD19532KTT | 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | CSD19532KTTT vs CSD19532KTT |
SSF1006A | Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3/2 | Suzhou Good-Ark Electronics Co Ltd | CSD19532KTTT vs SSF1006A |