Datasheets
CSD19532KTTT by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175

Part Details for CSD19532KTTT by Texas Instruments

Overview of CSD19532KTTT by Texas Instruments

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Price & Stock for CSD19532KTTT

Part # Distributor Description Stock Price Buy
DISTI # 296-43211-1-ND
DigiKey MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 9847
In Stock
  • 1 $1.9400
  • 10 $1.6260
  • 50 $1.5342
  • 100 $1.3151
  • 250 $1.2862
$1.2862 / $1.9400 Buy Now
DISTI # 595-CSD19532KTTT
Mouser Electronics MOSFET 100V, N-channel NexFET Pwr MOSFET RoHS: Compliant 19140
  • 1 $1.8100
  • 10 $1.5700
  • 50 $1.5100
  • 100 $1.3100
  • 250 $1.2800
  • 5,000 $1.2700
$1.2700 / $1.8100 Buy Now
Bristol Electronics   100
RFQ
DISTI # CSD19532KTTT
TME Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 250W, D2PAK Min Qty: 1 439
  • 1 $2.6500
  • 3 $2.4300
  • 10 $2.0500
  • 50 $1.6600
$1.6600 / $2.6500 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 200A, 250W, D2PAK 54925
RFQ

Part Details for CSD19532KTTT

CSD19532KTTT CAD Models

CSD19532KTTT Part Data Attributes

CSD19532KTTT Texas Instruments
Buy Now Datasheet
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CSD19532KTTT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 259 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 136 A
Drain-source On Resistance-Max 0.0066 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 18 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19532KTTT

This table gives cross-reference parts and alternative options found for CSD19532KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19532KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD19532KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments CSD19532KTTT vs CSD19532KTT
SSF1006A Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3/2 Suzhou Good-Ark Electronics Co Ltd CSD19532KTTT vs SSF1006A
Part Number Description Manufacturer Compare
IXFA180N10T2 Power Field-Effect Transistor, 180A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-263AA, 3 PIN IXYS Corporation CSD19532KTTT vs IXFA180N10T2
IXTQ200N10T Power Field-Effect Transistor, Littelfuse Inc CSD19532KTTT vs IXTQ200N10T
IXFP180N10T2 Power Field-Effect Transistor, Littelfuse Inc CSD19532KTTT vs IXFP180N10T2
IXTQ200N10T Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN IXYS Corporation CSD19532KTTT vs IXTQ200N10T
SSF1006A Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK-3/2 Suzhou Good-Ark Electronics Co Ltd CSD19532KTTT vs SSF1006A
IXTH200N10T Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXYS Corporation CSD19532KTTT vs IXTH200N10T
IXTV200N10T Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN IXYS Corporation CSD19532KTTT vs IXTV200N10T
CSD19532KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 5.6 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments CSD19532KTTT vs CSD19532KTT

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