-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
296-41135-1-ND
|
DigiKey | MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
8913 In Stock |
|
$1.9800 / $4.2400 | Buy Now |
DISTI #
595-CSD19535KTTT
|
Mouser Electronics | MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant | 1484 |
|
$2.0600 / $4.2400 | Buy Now |
DISTI #
CSD19535KTTT
|
TME | Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 300W, D2PAK Min Qty: 1 | 76 |
|
$2.6000 / $4.0000 | Buy Now |
|
Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 200A, 300W, D2PAK | 34678 |
|
RFQ | |
|
Chip 1 Exchange | INSTOCK | 450 |
|
RFQ |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
CSD19535KTTT
Texas Instruments
Buy Now
Datasheet
|
Compare Parts:
CSD19535KTTT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175
|
Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | TO-263, D2PAK-3/2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 451 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 197 A | |
Drain-source On Resistance-Max | 0.0041 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 38 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19535KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19535KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTB004N10G | Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK, 800-REEL | onsemi | CSD19535KTTT vs NTB004N10G |