Datasheets
CSD19535KTTT by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175

Part Details for CSD19535KTTT by Texas Instruments

Overview of CSD19535KTTT by Texas Instruments

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for CSD19535KTTT

Part # Distributor Description Stock Price Buy
DISTI # 296-41135-1-ND
DigiKey MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 8913
In Stock
  • 1 $4.2400
  • 10 $3.5600
  • 50 $3.3596
  • 100 $2.8797
  • 250 $2.7197
  • 500 $2.5597
  • 1,250 $2.1918
  • 2,500 $2.0638
  • 5,000 $1.9800
$1.9800 / $4.2400 Buy Now
DISTI # 595-CSD19535KTTT
Mouser Electronics MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant 1484
  • 1 $4.2400
  • 10 $3.5600
  • 50 $3.3500
  • 100 $2.8700
  • 250 $2.7100
  • 500 $2.5500
  • 1,000 $2.1900
  • 2,500 $2.0600
$2.0600 / $4.2400 Buy Now
DISTI # CSD19535KTTT
TME Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 300W, D2PAK Min Qty: 1 76
  • 1 $4.0000
  • 3 $3.6000
  • 10 $3.2000
  • 50 $2.6000
$2.6000 / $4.0000 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 200A, 300W, D2PAK 34678
RFQ
Chip 1 Exchange INSTOCK 450
RFQ

Part Details for CSD19535KTTT

CSD19535KTTT CAD Models

CSD19535KTTT Part Data Attributes

CSD19535KTTT Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19535KTTT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single D2PAK, 3.4 mOhm 2-DDPAK/TO-263 -55 to 175
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description TO-263, D2PAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 451 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 197 A
Drain-source On Resistance-Max 0.0041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 38 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19535KTTT

This table gives cross-reference parts and alternative options found for CSD19535KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19535KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NTB004N10G Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK, 800-REEL onsemi CSD19535KTTT vs NTB004N10G
Part Number Description Manufacturer Compare
NTB004N10G Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK, 800-REEL onsemi CSD19535KTTT vs NTB004N10G

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