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100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-41136-1-ND
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DigiKey | MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) |
805 In Stock |
|
$3.0631 / $6.2900 | Buy Now |
DISTI #
595-CSD19536KTTT
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Mouser Electronics | MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant | 810 |
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$3.0600 / $6.2900 | Buy Now |
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Bristol Electronics | Min Qty: 1 | 134 |
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$2.2324 / $5.1520 | Buy Now |
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Quest Components | 107 |
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$3.2200 / $6.9000 | Buy Now | |
DISTI #
CSD19536KTTT
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TME | Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 375W, D2PAK Min Qty: 1 | 0 |
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$4.1000 / $5.6800 | RFQ |
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Ameya Holding Limited | Transistor: N-MOSFET, unipolar, 100V, 200A, 375W, D2PAK | 53935 |
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RFQ | |
DISTI #
3385915
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element14 Asia-Pacific | RoHS: Not Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$5.3354 / $7.2508 | Buy Now |
DISTI #
3385915RL
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Farnell | RoHS: Not Compliant Min Qty: 100 Container: Reel | 0 |
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$5.2699 | Buy Now |
DISTI #
3385915
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Farnell | RoHS: Not Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$5.2699 / $6.8309 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 200A TO263 / Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R | 4000 |
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$3.7690 / $5.6530 | Buy Now |
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CSD19536KTTT
Texas Instruments
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Datasheet
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CSD19536KTTT
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 806 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 272 A | |
Drain-source On Resistance-Max | 0.0028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 61 pF | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19536KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19536KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD19536KTT | 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 | Texas Instruments | CSD19536KTTT vs CSD19536KTT |
AUIRLS4030 | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | Infineon Technologies AG | CSD19536KTTT vs AUIRLS4030 |
AUIRLS4030TRR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | International Rectifier | CSD19536KTTT vs AUIRLS4030TRR |