Datasheets
CSD19536KTTT by: Texas Instruments

100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175

Part Details for CSD19536KTTT by Texas Instruments

Overview of CSD19536KTTT by Texas Instruments

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Price & Stock for CSD19536KTTT

Part # Distributor Description Stock Price Buy
DISTI # 296-41136-1-ND
DigiKey MOSFET N-CH 100V 200A DDPAK Min Qty: 1 Lead time: 12 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) 805
In Stock
  • 1 $6.2900
  • 10 $5.2830
  • 50 $4.9864
  • 100 $4.2741
  • 250 $4.0367
  • 500 $3.7992
  • 1,250 $3.2531
  • 2,500 $3.0631
$3.0631 / $6.2900 Buy Now
DISTI # 595-CSD19536KTTT
Mouser Electronics MOSFET 100V N-Channel NexFET Power MOSFET RoHS: Compliant 810
  • 1 $6.2900
  • 10 $5.2900
  • 50 $4.9800
  • 100 $4.2700
  • 250 $4.0300
  • 500 $3.7900
  • 1,000 $3.2500
  • 2,500 $3.0600
$3.0600 / $6.2900 Buy Now
Bristol Electronics   Min Qty: 1 134
  • 1 $5.1520
  • 6 $3.3488
  • 16 $2.5760
  • 50 $2.4044
  • 105 $2.2324
$2.2324 / $5.1520 Buy Now
Quest Components   107
  • 1 $6.9000
  • 6 $3.4500
  • 59 $3.2200
$3.2200 / $6.9000 Buy Now
DISTI # CSD19536KTTT
TME Transistor: N-MOSFET, unipolar, 100V, 200A, Idm: 400A, 375W, D2PAK Min Qty: 1 0
  • 1 $5.6800
  • 3 $5.3400
  • 10 $4.7900
  • 50 $4.1000
$4.1000 / $5.6800 RFQ
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 100V, 200A, 375W, D2PAK 53935
RFQ
DISTI # 3385915
element14 Asia-Pacific   RoHS: Not Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $7.2508
  • 10 $6.5316
  • 50 $6.1573
  • 100 $5.3354
$5.3354 / $7.2508 Buy Now
DISTI # 3385915RL
Farnell   RoHS: Not Compliant Min Qty: 100 Container: Reel 0
  • 100 $5.2699
$5.2699 Buy Now
DISTI # 3385915
Farnell   RoHS: Not Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $6.8309
  • 5 $6.4938
  • 10 $6.1441
  • 50 $5.8069
  • 100 $5.2699
$5.2699 / $6.8309 Buy Now
Win Source Electronics MOSFET N-CH 100V 200A TO263 / Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) TO-263 T/R 4000
  • 9 $5.6530
  • 22 $4.6380
  • 34 $4.4930
  • 46 $4.3480
  • 60 $4.2030
  • 80 $3.7690
$3.7690 / $5.6530 Buy Now

Part Details for CSD19536KTTT

CSD19536KTTT CAD Models

CSD19536KTTT Part Data Attributes

CSD19536KTTT Texas Instruments
Buy Now Datasheet
Compare Parts:
CSD19536KTTT Texas Instruments 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175
Pbfree Code Yes
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Texas Instruments
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 806 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 272 A
Drain-source On Resistance-Max 0.0028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 61 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for CSD19536KTTT

This table gives cross-reference parts and alternative options found for CSD19536KTTT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19536KTTT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD19536KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments CSD19536KTTT vs CSD19536KTT
AUIRLS4030 Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier CSD19536KTTT vs AUIRLS4030TRR
Part Number Description Manufacturer Compare
AUIRLS4030-7TRL Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-7 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030-7TRL
AUIRLS4030-7P Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier CSD19536KTTT vs AUIRLS4030-7P
CSD19536KTT 100-V, N channel NexFET™ power MOSFET, single D2PAK, 2.4 mOhm 2-DDPAK/TO-263 -55 to 175 Texas Instruments CSD19536KTTT vs CSD19536KTT
AUIRLS4030 Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030
IRLB4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG CSD19536KTTT vs IRLB4030PBF
IRLSL4030PBF Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, IPAK-3 Infineon Technologies AG CSD19536KTTT vs IRLSL4030PBF
AUIRLS4030-7TRR Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 International Rectifier CSD19536KTTT vs AUIRLS4030-7TRR
AUIRLS4030-7TRR Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7 Infineon Technologies AG CSD19536KTTT vs AUIRLS4030-7TRR
IRLS4030-7PPBF Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, D2PAK- 7 Infineon Technologies AG CSD19536KTTT vs IRLS4030-7PPBF
AUIRLS4030TRR Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier CSD19536KTTT vs AUIRLS4030TRR

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