Datasheets
DF100R07W1H5FPB53BPSA2 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel, MODULE-26

Part Details for DF100R07W1H5FPB53BPSA2 by Infineon Technologies AG

Overview of DF100R07W1H5FPB53BPSA2 by Infineon Technologies AG

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for DF100R07W1H5FPB53BPSA2

Part # Distributor Description Stock Price Buy
DISTI # 22AJ2149
Newark Igbt Module, Dual, 650V, 50A Rohs Compliant: Yes |Infineon DF100R07W1H5FPB53BPSA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 6
  • 1 $75.2300
  • 5 $72.3900
  • 10 $69.5500
  • 25 $68.5500
  • 60 $67.5500
  • 120 $65.2200
$65.2200 / $75.2300 Buy Now
DISTI # 2156-DF100R07W1H5FPB53BPSA2-448-ND
DigiKey IGBT MOD 650V 40A 20MW Min Qty: 1 Lead time: 26 Weeks Container: Bulk MARKETPLACE PRODUCT 30
In Stock
  • 6 $59.4700
$59.4700 Buy Now
DISTI # DF100R07W1H5FPB53BPSA2-ND
DigiKey IGBT MOD 650V 40A 20MW Min Qty: 1 Lead time: 26 Weeks Container: Tray 10
In Stock
  • 1 $66.5300
  • 10 $60.2930
  • 30 $58.2143
  • 90 $54.0562
$54.0562 / $66.5300 Buy Now
DISTI # DF100R07W1H5FPB53BPSA2
Avnet Americas Trans IGBT Module N-CH 650V 40A - Trays (Alt: DF100R07W1H5FPB53BPSA2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 30 $63.8135
$63.8135 Buy Now
DISTI # 726-DFW1H5FPB53BPSA2
Mouser Electronics IGBT Modules EASY STANDARD RoHS: Compliant 30
  • 1 $60.6900
  • 10 $57.3600
  • 30 $54.0500
$54.0500 / $60.6900 Buy Now
Rochester Electronics DFXR07J - LOW POWER EASY RoHS: Compliant Status: Active Min Qty: 1 60
  • 1 $60.0400
  • 25 $58.8400
  • 100 $56.4400
  • 500 $54.0400
  • 1,000 $51.0300
$51.0300 / $60.0400 Buy Now
DISTI # DF100R07W1H5FPB53BPSA2
Avnet Americas Trans IGBT Module N-CH 650V 40A - Trays (Alt: DF100R07W1H5FPB53BPSA2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 30 $63.8135
$63.8135 Buy Now
DISTI # DF100R07W1H5FPB53BPSA2
Avnet Americas Trans IGBT Module N-CH 650V 40A - Trays (Alt: DF100R07W1H5FPB53BPSA2) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 26 Weeks, 0 Days Container: Tray 0
  • 30 $63.8135
$63.8135 Buy Now
DISTI # SP001629710
EBV Elektronik (Alt: SP001629710) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 3 Weeks, 6 Days EBV - 120
Buy Now
DISTI # 3625421
element14 Asia-Pacific IGBT MODULE, DUAL, 650V, 50A RoHS: Compliant Min Qty: 1 Container: Each 6
  • 1 $61.7276
  • 5 $58.0801
  • 10 $54.4254
  • 50 $50.4990
$50.4990 / $61.7276 Buy Now
DISTI # 3625421
Farnell IGBT MODULE, DUAL, 650V, 50A RoHS: Compliant Min Qty: 1 Lead time: 27 Weeks, 1 Days Container: Each 6
  • 1 $43.0836
$43.0836 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 90
  • 30 $68.4800
  • 90 $63.7300
$63.7300 / $68.4800 Buy Now

Part Details for DF100R07W1H5FPB53BPSA2

DF100R07W1H5FPB53BPSA2 CAD Models

DF100R07W1H5FPB53BPSA2 Part Data Attributes

DF100R07W1H5FPB53BPSA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
DF100R07W1H5FPB53BPSA2 Infineon Technologies AG Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel, MODULE-26
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-XUFM-X26
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Case Connection ISOLATED
Collector Current-Max (IC) 40 A
Collector-Emitter Voltage-Max 650 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 Code R-XUFM-X26
Number of Elements 2
Number of Terminals 26
Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 40 ns
Turn-on Time-Nom (ton) 17 ns

Alternate Parts for DF100R07W1H5FPB53BPSA2

This table gives cross-reference parts and alternative options found for DF100R07W1H5FPB53BPSA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DF100R07W1H5FPB53BPSA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DF100R07W1H5FP_B53 Insulated Gate Bipolar Transistor, Infineon Technologies AG DF100R07W1H5FPB53BPSA2 vs DF100R07W1H5FP_B53
Part Number Description Manufacturer Compare
DF100R07W1H5FP_B53 Insulated Gate Bipolar Transistor, Infineon Technologies AG DF100R07W1H5FPB53BPSA2 vs DF100R07W1H5FP_B53

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