Part Details for DMC3025LDV-7 by Diodes Incorporated
Overview of DMC3025LDV-7 by Diodes Incorporated
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Automotive
Price & Stock for DMC3025LDV-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMC3025LDV-7-ND
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DigiKey | MOSFET N/P-CH 15A POWERDI3333 Min Qty: 2000 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1888 / $0.2173 | Buy Now |
DISTI #
DMC3025LDV-7
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Avnet Americas | Transistor MOSFET Array Dual N-Channel/P-Channel 30V 15A 8-Pin PowerDI T/R - Tape and Reel (Alt: DMC3025LDV-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 16 Weeks, 0 Days Container: Reel | 50000 Factory Stock |
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$0.1626 / $0.1921 | Buy Now |
DISTI #
621-DMC3025LDV-7
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Mouser Electronics | MOSFET MOSFET BVDSS 31V-40V RoHS: Compliant | 0 |
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$0.2160 / $0.5700 | Order Now |
DISTI #
TMOS2843
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Rutronik | N/P-CH 30V 15A 25mOhm PDI3333-8 RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Container: Reel |
Stock DE - 46000 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.1889 / $0.2449 | Buy Now |
DISTI #
DMC3025LDV-7
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Avnet Silica | Transistor MOSFET Array Dual N-Channel/P-Channel 30V 15A 8-Pin PowerDI T/R (Alt: DMC3025LDV-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days | Silica - 2000 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2000 | 2000 |
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$0.2783 | Buy Now |
Part Details for DMC3025LDV-7
DMC3025LDV-7 CAD Models
DMC3025LDV-7 Part Data Attributes
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DMC3025LDV-7
Diodes Incorporated
Buy Now
Datasheet
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DMC3025LDV-7
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Avalanche Energy Rating (Eas) | 9.8 mJ | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 57 pF | |
JESD-30 Code | S-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.9 W | |
Pulsed Drain Current-Max (IDM) | 55 A | |
Reference Standard | MIL-STD-202 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |