Part Details for DMN10H220LDV-7 by Diodes Incorporated
Overview of DMN10H220LDV-7 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMN10H220LDV-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
12AJ7101
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Newark | Dual Mosfet, N-Ch/100V/10.5A/Powerdi3333 Rohs Compliant: Yes |Diodes Inc. DMN10H220LDV-7 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1270 |
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$0.2780 / $0.5580 | Buy Now |
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DISTI #
31-DMN10H220LDV-7TR-ND
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DigiKey | MOSFET 2N-CH 100V PWRDI3333 Min Qty: 2000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.1300 / $0.1549 | Buy Now |
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DISTI #
DMN10H220LDV-7
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Avnet Americas | Transistor MOSFET Array Dual N-Channel 100V 10.5A 8-Pin PowerDI 3333 T/R - Tape and Reel (Alt: DMN10H220LDV-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks, 0 Days Container: Reel | 14000 Factory Stock |
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$0.1032 / $0.1219 | Buy Now |
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DISTI #
621-DMN10H220LDV-7
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Mouser Electronics | MOSFET MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 2K RoHS: Compliant | 0 |
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$0.1300 / $0.5500 | Order Now |
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Future Electronics | MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 2K RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 24 Weeks Container: Reel | 0Reel |
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$0.1330 / $0.1460 | Buy Now |
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DISTI #
DMN10H220LDV-7
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Avnet Silica | Transistor MOSFET Array Dual N-Channel 100V 10.5A 8-Pin PowerDI 3333 T/R (Alt: DMN10H220LDV-7) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 10 Weeks, 0 Days | Silica - 2000 |
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Buy Now | |
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New Advantage Corporation | MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 2K RoHS: Compliant Min Qty: 1 Package Multiple: 2000 | 2000 |
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$0.1953 | Buy Now |
Part Details for DMN10H220LDV-7
DMN10H220LDV-7 CAD Models
DMN10H220LDV-7 Part Data Attributes
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DMN10H220LDV-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN10H220LDV-7
Diodes Incorporated
Power Field-Effect Transistor, 10.5A I(D), 100V, 0.222ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Avalanche Energy Rating (Eas) | 1.1 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10.5 A | |
| Drain-source On Resistance-Max | 0.222 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 12 pF | |
| JESD-30 Code | S-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 42 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |