Part Details for DMN3025LSS-13 by Diodes Incorporated
Overview of DMN3025LSS-13 by Diodes Incorporated
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for DMN3025LSS-13
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMN3025LSS-13CT-ND
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DigiKey | MOSFET N CH 30V 7.2A 8-SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2490 In Stock |
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$0.0969 / $0.5800 | Buy Now |
DISTI #
DMN3025LSS-13
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Avnet Americas | Trans MOSFET N-CH 30V 9.6A 8-Pin SO T/R - Tape and Reel (Alt: DMN3025LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel | 180000 Factory Stock |
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$0.0725 | Buy Now |
DISTI #
621-DMN3025LSS-13
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Mouser Electronics | MOSFETs 30V N-CH MOSFET RoHS: Compliant | 475 |
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$0.1110 / $0.4300 | Buy Now |
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Future Electronics | Single N-Channel 30 V 31 mOhm 6 nC 1.4 W Silicon Surface Mount Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0950 / $0.1070 | Buy Now |
DISTI #
DMN3025LSS-13
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TME | Transistor: N-MOSFET, unipolar, 30V, 7.7A, Idm: 40A, 1.1W, SO8 Min Qty: 3 | 0 |
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$0.1190 / $0.2560 | RFQ |
DISTI #
DMN3025LSS-13
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Avnet Asia | Trans MOSFET N-CH 30V 9.6A 8-Pin SO T/R (Alt: DMN3025LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days | 0 |
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$0.0729 / $0.0815 | Buy Now |
DISTI #
DMN3025LSS-13
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Avnet Silica | Trans MOSFET N-CH 30V 9.6A 8-Pin SO T/R (Alt: DMN3025LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 2500 |
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$0.1382 | Buy Now |
Part Details for DMN3025LSS-13
DMN3025LSS-13 CAD Models
DMN3025LSS-13 Part Data Attributes
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DMN3025LSS-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN3025LSS-13
Diodes Incorporated
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 24 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 7.2 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Temperature-Max | 150 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.4 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for DMN3025LSS-13
This table gives cross-reference parts and alternative options found for DMN3025LSS-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN3025LSS-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF7201PBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | DMN3025LSS-13 vs IRF7201PBF |
AP2306AGN-HF | TRANSISTOR 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | DMN3025LSS-13 vs AP2306AGN-HF |
IRF7201 | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | DMN3025LSS-13 vs IRF7201 |
IRF7201PBF | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | DMN3025LSS-13 vs IRF7201PBF |
AP2304GN-HF | TRANSISTOR 2.7 A, 25 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | DMN3025LSS-13 vs AP2304GN-HF |
AP2306AGN | TRANSISTOR 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | DMN3025LSS-13 vs AP2306AGN |
AP2302GN | TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | DMN3025LSS-13 vs AP2302GN |
FDS9412A | Power Field-Effect Transistor, 8A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 | Fairchild Semiconductor Corporation | DMN3025LSS-13 vs FDS9412A |
NDS9410 | TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | National Semiconductor Corporation | DMN3025LSS-13 vs NDS9410 |
AP2304AGN | TRANSISTOR 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | DMN3025LSS-13 vs AP2304AGN |