Datasheets
DMN3025LSS-13 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for DMN3025LSS-13 by Diodes Incorporated

Overview of DMN3025LSS-13 by Diodes Incorporated

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for DMN3025LSS-13

Part # Distributor Description Stock Price Buy
DISTI # 31-DMN3025LSS-13CT-ND
DigiKey MOSFET N CH 30V 7.2A 8-SO Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2490
In Stock
  • 1 $0.5800
  • 10 $0.3560
  • 100 $0.2272
  • 500 $0.1716
  • 1,000 $0.1536
  • 2,500 $0.1106
  • 5,000 $0.1007
  • 7,500 $0.0969
$0.0969 / $0.5800 Buy Now
DISTI # DMN3025LSS-13
Avnet Americas Trans MOSFET N-CH 30V 9.6A 8-Pin SO T/R - Tape and Reel (Alt: DMN3025LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 180000 Factory Stock
  • 2,500 $0.0725
$0.0725 Buy Now
DISTI # 621-DMN3025LSS-13
Mouser Electronics MOSFETs 30V N-CH MOSFET RoHS: Compliant 475
  • 1 $0.4300
  • 10 $0.2870
  • 100 $0.1510
  • 1,000 $0.1340
  • 2,500 $0.1110
$0.1110 / $0.4300 Buy Now
Future Electronics Single N-Channel 30 V 31 mOhm 6 nC 1.4 W Silicon Surface Mount Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks Container: Reel 0
Reel
  • 2,500 $0.1070
  • 7,500 $0.1030
  • 10,000 $0.1020
  • 25,000 $0.0983
  • 37,500 $0.0950
$0.0950 / $0.1070 Buy Now
DISTI # DMN3025LSS-13
TME Transistor: N-MOSFET, unipolar, 30V, 7.7A, Idm: 40A, 1.1W, SO8 Min Qty: 3 0
  • 3 $0.2560
  • 10 $0.1610
  • 30 $0.1430
  • 100 $0.1280
  • 500 $0.1190
$0.1190 / $0.2560 RFQ
DISTI # DMN3025LSS-13
Avnet Asia Trans MOSFET N-CH 30V 9.6A 8-Pin SO T/R (Alt: DMN3025LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days 0
  • 2,500 $0.0815
  • 5,000 $0.0804
  • 7,500 $0.0794
  • 12,500 $0.0784
  • 25,000 $0.0765
  • 62,500 $0.0746
  • 125,000 $0.0729
$0.0729 / $0.0815 Buy Now
DISTI # DMN3025LSS-13
Avnet Silica Trans MOSFET N-CH 30V 9.6A 8-Pin SO T/R (Alt: DMN3025LSS-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Silica - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 2500
  • 2,500 $0.1382
$0.1382 Buy Now

Part Details for DMN3025LSS-13

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DMN3025LSS-13 Part Data Attributes

DMN3025LSS-13 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN3025LSS-13 Diodes Incorporated Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 24 Weeks
Samacsys Manufacturer Diodes Incorporated
Configuration SINGLE
Drain Current-Max (ID) 7.2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.4 W
Surface Mount YES
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

Alternate Parts for DMN3025LSS-13

This table gives cross-reference parts and alternative options found for DMN3025LSS-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMN3025LSS-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF7201PBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier DMN3025LSS-13 vs IRF7201PBF
AP2306AGN-HF TRANSISTOR 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp DMN3025LSS-13 vs AP2306AGN-HF
IRF7201 Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier DMN3025LSS-13 vs IRF7201
IRF7201PBF Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 Infineon Technologies AG DMN3025LSS-13 vs IRF7201PBF
AP2304GN-HF TRANSISTOR 2.7 A, 25 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp DMN3025LSS-13 vs AP2304GN-HF
AP2306AGN TRANSISTOR 5 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp DMN3025LSS-13 vs AP2306AGN
AP2302GN TRANSISTOR 3.2 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp DMN3025LSS-13 vs AP2302GN
FDS9412A Power Field-Effect Transistor, 8A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Fairchild Semiconductor Corporation DMN3025LSS-13 vs FDS9412A
NDS9410 TRANSISTOR 7 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power National Semiconductor Corporation DMN3025LSS-13 vs NDS9410
AP2304AGN TRANSISTOR 2.5 A, 30 V, 0.117 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE PACKAGE-3, FET General Purpose Power Advanced Power Electronics Corp DMN3025LSS-13 vs AP2304AGN

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