Part Details for DMP2010UFG-13 by Diodes Incorporated
Overview of DMP2010UFG-13 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMP2010UFG-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
DMP2010UFG-13-ND
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DigiKey | MOSFET P-CH 20V 12.7A PWRDI3333 Min Qty: 3000 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2756 / $0.3174 | Buy Now |
|
DISTI #
DMP2010UFG-13
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Avnet Americas | MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K - Tape and Reel (Alt: DMP2010UFG-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 6000 Factory Stock |
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$0.2187 / $0.2584 | Buy Now |
|
DISTI #
621-DMP2010UFG-13
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Mouser Electronics | MOSFET 20V P-Ch Enh FET 10Vgss -80A Idm RoHS: Compliant | 12000 |
|
$0.3150 / $0.8300 | Buy Now |
|
DISTI #
DMP2010UFG-13
|
Avnet Americas | MOSFET BVDSS: 8V~24V PowerDI3333-8 T&R 3K - Tape and Reel (Alt: DMP2010UFG-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 6000 Factory Stock |
|
$0.2187 / $0.2584 | Buy Now |
|
|
Chip1Cloud | MOSFET P-CH 20V 12.7A PWRDI3333 | 2870 |
|
RFQ |
Part Details for DMP2010UFG-13
DMP2010UFG-13 CAD Models
DMP2010UFG-13 Part Data Attributes:
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DMP2010UFG-13
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMP2010UFG-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Avalanche Energy Rating (Eas) | 64 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 12.7 A | |
| Drain-source On Resistance-Max | 0.0125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 460 pF | |
| JESD-30 Code | S-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.3 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Reference Standard | MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |