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Transistors / Power Field-Effect Transistors / DN3765K4-G
Datasheets
DN3765K4-G by:

0.3A, 650V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

Part Details for DN3765K4-G by Microchip Technology Inc

Overview of DN3765K4-G by Microchip Technology Inc

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Price & Stock for DN3765K4-G

Part # Distributor Description Stock Price Buy
DISTI # 67X5086
Newark Mosfet, N Channel, 650V, 0.3A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:300Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Microchip DN3765K4-G Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $2.6000
$2.6000 Buy Now
DISTI # 85X3190
Newark Mosfet, N Channel, 650V, 0.3A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:650V, Continuous Drain Current Id:300Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Microchip DN3765K4-G Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 50 $2.7900
$2.7900 Buy Now
DISTI # 87X8694
Newark Power Mosfet, N Channel, 300 Ma, 650 V, 8 Ohm, 0 V Rohs Compliant: Yes |Microchip DN3765K4-G Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 1 $3.4500
  • 10 $3.1700
  • 25 $2.9000
  • 50 $2.7900
  • 100 $2.7300
$2.7300 / $3.4500 Buy Now
DISTI # DN3765K4-GCT-ND
DigiKey MOSFET N-CH 650V 300MA TO252-3 Min Qty: 1 Lead time: 31 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3424
In Stock
  • 1 $3.2900
  • 25 $2.7600
  • 100 $2.5000
  • 2,000 $2.5000
$2.5000 / $3.2900 Buy Now
DISTI # DN3765K4-G
Avnet Americas Trans MOSFET N-CH 650V 0.3A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: DN3765K4-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 31 Weeks, 0 Days Container: Reel 0
  • 1 $3.2900
  • 25 $2.7600
  • 100 $2.5000
$2.5000 / $3.2900 Buy Now
DISTI # 689-DN3765K4-G
Mouser Electronics MOSFET NCh DEPLETION-MODE VERTICAL DMOS FET RoHS: Compliant 1326
  • 1 $3.2900
  • 25 $2.7600
  • 100 $2.5900
$2.5900 / $3.2900 Buy Now
DISTI # DN3765K4-G
Microchip Technology Inc MOSFET, DEPLETION-MODE, 650V, 8.0 Ohm, Projected EOL: 2048-10-03 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $3.2900
  • 25 $2.7600
  • 100 $2.5000
  • 1,000 $2.4200
  • 5,000 $2.4000
$2.4000 / $3.2900 Buy Now
DISTI # 70431591
RS 3 DPAK T/RMOSFET, DEPLETION-MODE, 650V, 8.0 Ohm | Microchip Technology Inc. DN3765K4-G RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Bulk 2000
  • 1 $1.8100
$1.8100 Buy Now
Future Electronics MOSFET, DEPLETION-MODE, 650V, 8.0 OHM RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 0
  • 2,000 $2.8400
$2.8400 Buy Now
Onlinecomponents.com MOSFET (Metal Oxide) Transistor - N Channel - 650 V - 300 mA - 8 ohm - TO-252AA - Surface Mount. RoHS: Compliant 2000 In Stock
2000 Factory Stock
  • 100 $2.4500
  • 250 $2.4400
  • 500 $2.4200
  • 2,000 $2.4000
  • 4,000 $2.3800
  • 6,000 $2.3700
  • 8,000 $2.3500
  • 10,000 $2.3300
$2.3300 / $2.4500 Buy Now
DISTI # DN3765K4-G
Avnet Americas Trans MOSFET N-CH 650V 0.3A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: DN3765K4-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 31 Weeks, 0 Days Container: Reel 0
  • 1 $3.2900
  • 25 $2.7600
  • 100 $2.5000
$2.5000 / $3.2900 Buy Now
Ameya Holding Limited MOSFET N-CH 650V 300MA 3DPAK 2000
RFQ
DISTI # DN3765K4-G
Avnet Americas Trans MOSFET N-CH 650V 0.3A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: DN3765K4-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 31 Weeks, 0 Days Container: Reel 0
  • 1 $3.2900
  • 25 $2.7600
  • 100 $2.5000
$2.5000 / $3.2900 Buy Now
NAC MOSFET, DEPLETION-MODE, 650V, 8.0 Ohm - Package: 3 DPAK T/R RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 0
  • 1 $3.1300
  • 100 $2.8400
  • 500 $2.6600
  • 1,000 $2.6000
$2.6000 / $3.1300 Buy Now
DISTI # DN3765K4-G
Avnet Silica Trans MOSFET N-CH 650V 0.3A 3-Pin(2+Tab) TO-252 (Alt: DN3765K4-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks, 4 Days Silica - 0
Buy Now
DISTI # DN3765K4-G
EBV Elektronik Trans MOSFET N-CH 650V 0.3A 3-Pin(2+Tab) TO-252 (Alt: DN3765K4-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 4 Weeks, 3 Days EBV - 0
Buy Now
DISTI # 2450519
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $3.5814
  • 25 $3.0090
  • 100 $2.7888
  • 2,000 $2.7741
  • 4,000 $2.7668
$2.7668 / $3.5814 Buy Now
DISTI # 2450519RL
Farnell MOSFET, N CH, 650V, 0.3A, TO-252AA-3 RoHS: Compliant Min Qty: 2000 Lead time: 33 Weeks, 1 Days Container: Reel 0
  • 2,000 $2.5850
$2.5850 Buy Now
DISTI # 2450519
Farnell MOSFET, N CH, 650V, 0.3A, TO-252AA-3 RoHS: Compliant Min Qty: 2000 Lead time: 33 Weeks, 1 Days Container: Cut Tape 0
  • 2,000 $2.5850
$2.5850 Buy Now
Master Electronics MOSFET (Metal Oxide) Transistor - N Channel - 650 V - 300 mA - 8 ohm - TO-252AA - Surface Mount. RoHS: Compliant 2000 In Stock
2000 Factory Stock
  • 100 $2.4500
  • 250 $2.4400
  • 500 $2.4200
  • 2,000 $2.4000
  • 4,000 $2.3800
  • 6,000 $2.3700
  • 8,000 $2.3500
  • 10,000 $2.3300
$2.3300 / $2.4500 Buy Now

Part Details for DN3765K4-G

DN3765K4-G CAD Models

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DN3765K4-G Part Data Attributes

Parametric Data
DN3765K4-G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
DN3765K4-G Microchip Technology Inc 0.3A, 650V, 8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description ,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 31 Weeks
Samacsys Manufacturer Microchip
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 0.3 A
Drain-source On Resistance-Max 8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 110 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Pulsed Drain Current-Max (IDM) 0.5 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 175 ns
Turn-on Time-Max (ton) 125 ns

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