Datasheets
F3L50R06W1E3B11BOMA1 by: Infineon Technologies AG

Insulated Gate Bipolar Transistor

Part Details for F3L50R06W1E3B11BOMA1 by Infineon Technologies AG

Overview of F3L50R06W1E3B11BOMA1 by Infineon Technologies AG

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Applications Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Price & Stock for F3L50R06W1E3B11BOMA1

Part # Distributor Description Stock Price Buy
DISTI # F3L50R06W1E3B11BOMA1-ND
DigiKey IGBT MODULE 600V 75A 175W Min Qty: 24 Lead time: 26 Weeks Container: Tray Temporarily Out of Stock
  • 24 $46.1858
$46.1858 Buy Now
DISTI # 76443093
Verical Trans IGBT Module N-CH 600V 75A 175W 14-Pin EASY1B-2 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2143 Americas - 13
  • 1 $36.0900
  • 24 $35.7300
$35.7300 / $36.0900 Buy Now
DISTI # 59849790
Verical Trans IGBT Module N-CH 600V 75A 175W 14-Pin EASY1B-2 Tray Min Qty: 1 Package Multiple: 1 Date Code: 2143 Americas - 3
  • 1 $38.4800
$38.4800 Buy Now
Rochester Electronics F3L50R06 - IGBT Module ' RoHS: Compliant Status: Active Min Qty: 1 2
  • 1 $41.8100
  • 25 $40.9700
  • 100 $39.3000
  • 500 $37.6300
  • 1,000 $35.5400
$35.5400 / $41.8100 Buy Now
DISTI # SP000667798
EBV Elektronik Transistor IGBT Module N-CH 600V 75A �20V Screw Tray (Alt: SP000667798) RoHS: Compliant Min Qty: 24 Package Multiple: 24 Lead time: 3 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 2781226
element14 Asia-Pacific   RoHS: Compliant Min Qty: 1 Container: Each 0
  • 1 $48.6806
  • 5 $47.7119
  • 10 $46.7358
  • 50 $45.7670
  • 100 $44.7909
$44.7909 / $48.6806 Buy Now
DISTI # 2781226
Farnell IGBT, MODULE, N-CH, 600V, 75A RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each 0
  • 1 $31.8182
  • 5 $30.4621
  • 10 $29.2315
  • 50 $29.1562
$29.1562 / $31.8182 Buy Now

Part Details for F3L50R06W1E3B11BOMA1

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F3L50R06W1E3B11BOMA1 Part Data Attributes:

F3L50R06W1E3B11BOMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
F3L50R06W1E3B11BOMA1 Infineon Technologies AG Insulated Gate Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer Infineon
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Alternate Parts for F3L50R06W1E3B11BOMA1

This table gives cross-reference parts and alternative options found for F3L50R06W1E3B11BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of F3L50R06W1E3B11BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APTGT50H60T3G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc F3L50R06W1E3B11BOMA1 vs APTGT50H60T3G
APTGT50H60T1G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel Microchip Technology Inc F3L50R06W1E3B11BOMA1 vs APTGT50H60T1G
APTGT50H60T2G Insulated Gate Bipolar Transistor Microchip Technology Inc F3L50R06W1E3B11BOMA1 vs APTGT50H60T2G
APTGT50H60T3 Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, MODULE-25 Microsemi Corporation F3L50R06W1E3B11BOMA1 vs APTGT50H60T3
APTGT50H60T3G Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN Microsemi Corporation F3L50R06W1E3B11BOMA1 vs APTGT50H60T3G

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