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Part Details for F4-75R06W1E3 by Infineon Technologies AG
Overview of F4-75R06W1E3 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for F4-75R06W1E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
641-F4-75R06W1E3
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Mouser Electronics | IGBT Modules N-CH 600V 100A RoHS: Compliant | 12 |
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$30.3600 / $40.2600 | Buy Now |
Part Details for F4-75R06W1E3
F4-75R06W1E3 CAD Models
F4-75R06W1E3 Part Data Attributes
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F4-75R06W1E3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
F4-75R06W1E3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, MODULE-25
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X11 | |
| Pin Count | 25 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X11 | |
| Number of Elements | 4 | |
| Number of Terminals | 11 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 275 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 330 ns | |
| Turn-on Time-Nom (ton) | 45 ns | |
| VCEsat-Max | 1.9 V |
Alternate Parts for F4-75R06W1E3
This table gives cross-reference parts and alternative options found for F4-75R06W1E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of F4-75R06W1E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTCV60TLM45T3G | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-32 | Microsemi Corporation | F4-75R06W1E3 vs APTCV60TLM45T3G |
| APTGT75TL60T3G | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN | Microsemi Corporation | F4-75R06W1E3 vs APTGT75TL60T3G |
| APTGT75TL60T3G | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | Microchip Technology Inc | F4-75R06W1E3 vs APTGT75TL60T3G |
| F3L75R07W2E3B11BOMA1 | Insulated Gate Bipolar Transistor | Infineon Technologies AG | F4-75R06W1E3 vs F3L75R07W2E3B11BOMA1 |
| APTGV75H60T3G | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, ROHS COMPLIANT, SP3, 25 PIN | Microsemi Corporation | F4-75R06W1E3 vs APTGV75H60T3G |
| APTCV60TLM45T3G | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel | Microchip Technology Inc | F4-75R06W1E3 vs APTCV60TLM45T3G |