Part Details for FCD600N65S3R0 by onsemi
Overview of FCD600N65S3R0 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FCD600N65S3R0
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
65AC4673
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Newark | Superfet3 650V Dpak Pkg/Reel Rohs Compliant: Yes |Onsemi FCD600N65S3R0 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.7600 / $0.7830 | Buy Now |
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DISTI #
488-FCD600N65S3R0CT-ND
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DigiKey | MOSFET N-CH 650V 6A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2437 In Stock |
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$0.7301 / $1.7400 | Buy Now |
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DISTI #
FCD600N65S3R0
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Avnet Americas | SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin DPAK T/R - Tape and Reel (Alt: FCD600N65S3R0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.7243 / $0.8645 | Buy Now |
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DISTI #
863-FCD600N65S3R0
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Mouser Electronics | MOSFET SUPERFET3 650V 10A 360 mOhm RoHS: Compliant | 317 |
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$0.7300 / $1.7300 | Buy Now |
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Rochester Electronics | FCD600N65S3R0 - Power MOSFET, N-Channel, SUPERFET III, Easy Drive, 650 V, 6 A, 600 m, DPAK RoHS: Not Compliant Status: Active Min Qty: 1 | 322 |
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$0.7240 / $0.8518 | Buy Now |
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DISTI #
FCD600N65S3R0
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Avnet Americas | SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin DPAK T/R - Tape and Reel (Alt: FCD600N65S3R0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.7243 / $0.8645 | Buy Now |
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DISTI #
FCD600N65S3R0
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Avnet Americas | SUPERFET III Easy‐Drive MOSFET Single N‐Channel 650V 6A 600m Ohm 3-Pin DPAK T/R - Tape and Reel (Alt: FCD600N65S3R0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.7243 / $0.8645 | Buy Now |
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Chip 1 Exchange | INSTOCK | 1404 |
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RFQ | |
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DISTI #
FCD600N65S3R0
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Avnet Silica | SUPERFET III Easy-Drive MOSFET Single N-Channel 650V 6A 600m Ohm 3-Pin DPAK T/R (Alt: FCD600N65S3R0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 1 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FCD600N65S3R0
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EBV Elektronik | SUPERFET III Easy-Drive MOSFET Single N-Channel 650V 6A 600m Ohm 3-Pin DPAK T/R (Alt: FCD600N65S3R0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 2 Weeks, 2 Days | EBV - 0 |
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Buy Now |
Part Details for FCD600N65S3R0
FCD600N65S3R0 CAD Models
FCD600N65S3R0 Part Data Attributes
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FCD600N65S3R0
onsemi
Buy Now
Datasheet
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Compare Parts:
FCD600N65S3R0
onsemi
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 6 A, 600 mΩ, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 24 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FCD600N65S3R0
This table gives cross-reference parts and alternative options found for FCD600N65S3R0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCD600N65S3R0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STH8NA60FI | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | FCD600N65S3R0 vs STH8NA60FI |
| SPP47N10 | Power Field-Effect Transistor, 47A I(D), 100V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FCD600N65S3R0 vs SPP47N10 |
| IXFH7N90Q | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | FCD600N65S3R0 vs IXFH7N90Q |
| IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | FCD600N65S3R0 vs IXFH14N80 |
| IPD90N06S306ATMA1 | Power Field-Effect Transistor, 90A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, TO-252, 3 PIN | Infineon Technologies AG | FCD600N65S3R0 vs IPD90N06S306ATMA1 |
| STP4NK60Z | N-channel 600 V, 1.7 Ohm typ., 4 A SuperMESH Power MOSFET in TO-220 package | STMicroelectronics | FCD600N65S3R0 vs STP4NK60Z |
| SSP10N60B | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FCD600N65S3R0 vs SSP10N60B |
| STP19N06 | 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FCD600N65S3R0 vs STP19N06 |
| FQPF7N20 | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | FCD600N65S3R0 vs FQPF7N20 |
| STW80NF55-06 | 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | FCD600N65S3R0 vs STW80NF55-06 |