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Part Details for FCPF11N60NT by onsemi
Overview of FCPF11N60NT by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
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- Number of Functional Equivalents:
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Applications
Consumer Electronics
Energy and Power Systems
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Medical Imaging
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Price & Stock for FCPF11N60NT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
64R2980
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Newark | Mosfet Transistor, N Channel, 10.8 A, 600 V, 0.255 Ohm, 10 V, 2 V |Onsemi FCPF11N60NT Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.9500 / $2.4100 | Buy Now |
|
DISTI #
FCPF11N60NT
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Avnet Americas | Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF11N60NT) RoHS: Compliant Min Qty: 150 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 465 Partner Stock |
|
$4.1540 / $4.9580 | Buy Now |
|
DISTI #
FCPF11N60NT
|
Avnet Americas | Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF11N60NT) RoHS: Compliant Min Qty: 150 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 465 Partner Stock |
|
$4.1540 / $4.9580 | Buy Now |
|
DISTI #
FCPF11N60NT
|
Avnet Americas | Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube (Alt: FCPF11N60NT) RoHS: Compliant Min Qty: 150 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 465 Partner Stock |
|
$4.1540 / $4.9580 | Buy Now |
|
DISTI #
2083224
|
Farnell | RoHS: Compliant Min Qty: 1 Container: Each | 15191 |
|
$1.3845 / $2.0331 | Buy Now |
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Flip Electronics | Stock, ship today | 465 |
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$3.3500 | RFQ |
Part Details for FCPF11N60NT
FCPF11N60NT CAD Models
FCPF11N60NT Part Data Attributes
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FCPF11N60NT
onsemi
Buy Now
Datasheet
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Compare Parts:
FCPF11N60NT
onsemi
Power MOSFET, N-Channel, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220F, 1000-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-220F, 3 PIN | |
| Manufacturer Package Code | 221AT | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 201.7 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 10.8 A | |
| Drain-source On Resistance-Max | 0.299 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 32.1 W | |
| Pulsed Drain Current-Max (IDM) | 32.4 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |