Datasheets
FDB024N06 by:

N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ, 800-REEL

Part Details for FDB024N06 by onsemi

Overview of FDB024N06 by onsemi

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Price & Stock for FDB024N06

Part # Distributor Description Stock Price Buy
DISTI # 07P9156
Newark Mosfet Transistor, N Channel, 120 A, 60 V, 0.0018 Ohm, 10 V, 3.5 V |Onsemi FDB024N06 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.0300
  • 3,000 $2.9000
  • 6,000 $2.7100
  • 12,000 $2.5100
  • 18,000 $2.4200
  • 30,000 $2.3800
$2.3800 / $3.0300 Buy Now
DISTI # 27AC5654
Newark Fet 60V 2.4 Mohm D2Pak Rohs Compliant: Yes |Onsemi FDB024N06 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.0300
  • 3,000 $2.9000
  • 6,000 $2.7100
  • 12,000 $2.5100
  • 18,000 $2.4200
  • 30,000 $2.3800
$2.3800 / $3.0300 Buy Now
DISTI # FDB024N06CT-ND
DigiKey MOSFET N-CH 60V 120A D2PAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2400
In Stock
  • 1 $5.1700
  • 10 $4.3380
  • 100 $3.5093
  • 800 $3.1194
  • 1,600 $2.6710
  • 2,400 $2.5150
$2.5150 / $5.1700 Buy Now
DISTI # FDB024N06
Avnet Americas Trans MOSFET N-CH 60V 265A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB024N06) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 4000
RFQ
DISTI # 512-FDB024N06
Mouser Electronics MOSFET 60V N-Channel PowerTrench 1686
  • 1 $5.0600
  • 10 $4.2700
  • 25 $4.1300
  • 100 $3.4900
  • 250 $3.2700
  • 500 $3.1000
  • 800 $2.7600
$2.7600 / $5.0600 Buy Now
DISTI # V72:2272_06300769
Arrow Electronics Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 15 Weeks Date Code: 2316 Container: Cut Strips Americas - 569
  • 1 $4.4040
  • 10 $3.8280
  • 25 $3.7140
  • 50 $3.6770
  • 100 $3.3400
  • 250 $3.1040
  • 500 $2.4750
$2.4750 / $4.4040 Buy Now
DISTI # 71800049
Verical Trans MOSFET N-CH Si 60V 265A 3-Pin(2+Tab) D2PAK T/R Min Qty: 3 Package Multiple: 1 Date Code: 2316 Americas - 569
  • 3 $4.4040
  • 10 $3.8280
  • 25 $3.7140
  • 50 $3.6770
  • 100 $3.3400
  • 250 $3.1040
  • 500 $2.4750
$2.4750 / $4.4040 Buy Now
DISTI # FDB024N06
Avnet Americas Trans MOSFET N-CH 60V 265A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB024N06) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel 4000
RFQ
DISTI # FDB024N06
TME Transistor: N-MOSFET, unipolar, 60V, 190A, Idm: 1060A, 395W, D2PAK Min Qty: 1 0
  • 1 $4.9600
  • 5 $4.4700
  • 25 $3.9400
  • 100 $3.5500
  • 800 $3.3100
$3.3100 / $4.9600 RFQ
DISTI # 2453844
Farnell MOSFET, N-CH, 60V, 120A, TO-263AB-3 RoHS: Compliant Min Qty: 1 Lead time: 24 Weeks, 1 Days Container: Cut Tape 0
  • 1 $4.5261
  • 10 $3.8491
  • 100 $3.3350
  • 250 $3.1720
  • 500 $2.8335
  • 800 $2.4574
$2.4574 / $4.5261 Buy Now
DISTI # 2453844RL
Farnell MOSFET, N-CH, 60V, 120A, TO-263AB-3 RoHS: Compliant Min Qty: 10 Lead time: 24 Weeks, 1 Days Container: Reel 0
  • 10 $3.8491
  • 100 $3.3350
  • 250 $3.1720
  • 500 $2.8335
  • 800 $2.4574
$2.4574 / $3.8491 Buy Now

Part Details for FDB024N06

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FDB024N06 Part Data Attributes:

FDB024N06 onsemi
Buy Now Datasheet
Compare Parts:
FDB024N06 onsemi N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description D2PAK-3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 42 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 2531 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0024 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 395 W
Pulsed Drain Current-Max (IDM) 1060 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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