Part Details for FDB029N06 by Fairchild Semiconductor Corporation
Overview of FDB029N06 by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDB029N06
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDB029N06-ND
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DigiKey | MOSFET N-CH 60V 120A D2PAK Min Qty: 73 Container: Bulk MARKETPLACE PRODUCT |
5208 In Stock |
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$4.1400 | Buy Now |
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Bristol Electronics | 418 |
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RFQ | ||
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Quest Components | 334 |
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$2.8710 / $5.2200 | Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 120A, 60V, 0.0031ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 | 5992 |
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$3.5600 / $4.1800 | Buy Now |
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Chip1Cloud | MOSFET N-CH 60V 120A D2PAK | 25000 |
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RFQ |
Part Details for FDB029N06
FDB029N06 CAD Models
FDB029N06 Part Data Attributes:
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FDB029N06
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDB029N06
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, TO-263, SURFACE MOUNT (D2PAK) | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 1434 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.0031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 231 W | |
| Pulsed Drain Current-Max (IDM) | 772 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |