Part Details for FDB12N50TM by onsemi
Overview of FDB12N50TM by onsemi
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDB12N50TM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
06R2487
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Newark | N Ch Mosfet, 500V, 11.5A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:11.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi FDB12N50TM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.2300 / $1.5400 | Buy Now |
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DISTI #
52M3141
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Newark | N Ch Mosfet, 500V, 11.5A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:11.5A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi FDB12N50TM Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.9380 / $1.2600 | Buy Now |
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DISTI #
FDB12N50TMCT-ND
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DigiKey | MOSFET N-CH 500V 11.5A D2PAK Min Qty: 1 Lead time: 36 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1 In Stock |
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$0.9696 / $2.2300 | Buy Now |
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DISTI #
FDB12N50TM
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Avnet Americas | Trans MOSFET N-CH 500V 11.5A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB12N50TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 36 Weeks, 0 Days Container: Reel | 0 |
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$1.0050 / $1.1250 | Buy Now |
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DISTI #
512-FDB12N50TM
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Mouser Electronics | MOSFET 500V N-CH MOSFET RoHS: Compliant | 757 |
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$0.9690 / $2.2300 | Buy Now |
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Future Electronics | N-Channel 500 V 11.5 A 0.65 Ohm Surface Mount UniFETTM Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 6 Weeks Container: Reel | 0Reel |
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$0.9800 / $1.0600 | Buy Now |
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Future Electronics | N-Channel 500 V 11.5 A 0.65 Ohm Surface Mount UniFETTM Mosfet - D2PAK-3 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 36 Weeks Container: Reel | 0Reel |
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$0.9800 / $1.0600 | Buy Now |
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DISTI #
FDB12N50TM
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TME | Transistor: N-MOSFET, unipolar, 500V, 6.9A, Idm: 46A, 165W, D2PAK Min Qty: 1 | 0 |
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$0.8800 / $1.3700 | RFQ |
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DISTI #
FDB12N50TM
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
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$0.9400 | Buy Now |
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Chip 1 Exchange | INSTOCK | 57200 |
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RFQ |
Part Details for FDB12N50TM
FDB12N50TM CAD Models
FDB12N50TM Part Data Attributes
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FDB12N50TM
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB12N50TM
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 11.5 A, 650 mΩ, D2PAK, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-2/3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 36 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 456 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 11.5 A | |
| Drain-source On Resistance-Max | 0.65 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 165 W | |
| Pulsed Drain Current-Max (IDM) | 46 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |