Part Details for FDB3652 by Fairchild Semiconductor Corporation
Overview of FDB3652 by Fairchild Semiconductor Corporation
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB3652
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3136 |
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Bristol Electronics | 30 |
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Bristol Electronics | 191 |
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Quest Components | 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 18 |
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$1.3770 / $1.7213 | Buy Now |
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Quest Components | 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 2508 |
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$1.0328 / $2.7540 | Buy Now |
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Quest Components | 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 13 |
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$1.9750 / $3.1600 | Buy Now |
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ComSIT USA | 100 V, 61 A, 16 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | Europe - 375 |
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Chip 1 Exchange | INSTOCK | 932 |
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Chip1Cloud | MOSFET N-CH 100V 61A TO-263AB | 10000 |
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RFQ |
Part Details for FDB3652
FDB3652 CAD Models
FDB3652 Part Data Attributes:
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FDB3652
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDB3652
Fairchild Semiconductor Corporation
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | TO-263AB, 3 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 182 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 9 A | |
Drain-source On Resistance-Max | 0.016 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDB3652
This table gives cross-reference parts and alternative options found for FDB3652. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB3652, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDB3652 | 9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | Rochester Electronics LLC | FDB3652 vs FDB3652 |
FQB70N08TM | 70A, 80V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | Rochester Electronics LLC | FDB3652 vs FQB70N08TM |
FDB3652 | N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 800-REEL | onsemi | FDB3652 vs FDB3652 |