Datasheets
FDB3652 by:

N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL

Part Details for FDB3652 by Fairchild Semiconductor Corporation

Overview of FDB3652 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDB3652

Part # Distributor Description Stock Price Buy
Bristol Electronics   3136
RFQ
Bristol Electronics   30
RFQ
Bristol Electronics   191
RFQ
Quest Components 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 18
  • 1 $1.7213
  • 4 $1.5836
  • 17 $1.3770
$1.3770 / $1.7213 Buy Now
Quest Components 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 2508
  • 1 $2.7540
  • 472 $1.1360
  • 881 $1.0328
$1.0328 / $2.7540 Buy Now
Quest Components 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 13
  • 1 $3.1600
  • 3 $2.3700
  • 12 $1.9750
$1.9750 / $3.1600 Buy Now
ComSIT USA 100 V, 61 A, 16 MILLI OHM N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant Europe - 375
RFQ
Chip 1 Exchange INSTOCK 932
RFQ
Chip1Cloud MOSFET N-CH 100V 61A TO-263AB 10000
RFQ

Part Details for FDB3652

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FDB3652 Part Data Attributes:

FDB3652 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDB3652 Fairchild Semiconductor Corporation N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 2LD,TO263, SURFACE MOUNT, 800/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description TO-263AB, 3 PIN
Pin Count 2
Manufacturer Package Code 2LD,TO263, SURFACE MOUNT
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 182 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDB3652

This table gives cross-reference parts and alternative options found for FDB3652. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB3652, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDB3652 9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC FDB3652 vs FDB3652
FQB70N08TM 70A, 80V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC FDB3652 vs FQB70N08TM
FDB3652 N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ, 800-REEL onsemi FDB3652 vs FDB3652
Part Number Description Manufacturer Compare
FQB70N08TM 70A, 80V, 0.017ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 Rochester Electronics LLC FDB3652 vs FQB70N08TM
FQB70N08 Power Field-Effect Transistor, 70A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB3652 vs FQB70N08
FQB70N08TM Power Field-Effect Transistor, 70A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FDB3652 vs FQB70N08TM
FDB3652 9A, 100V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Rochester Electronics LLC FDB3652 vs FDB3652

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