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Transistors / Power Field-Effect Transistors / FDB86135
Datasheets
FDB86135 by:

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 176A, 3.5mΩ, 800-REEL

Part Details for FDB86135 by onsemi

Overview of FDB86135 by onsemi

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Price & Stock for FDB86135

Part # Distributor Description Stock Price Buy
DISTI # 94T9932
Newark Fet 100V 3.5 Mohm D2Pak/Reel |Onsemi FDB86135 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.7700
  • 3,000 $3.6000
  • 6,000 $3.3600
  • 12,000 $3.1200
  • 18,000 $3.0000
  • 30,000 $2.9600
$2.9600 / $3.7700 Buy Now
DISTI # FDB86135CT-ND
DigiKey MOSFET N-CH 100V 75A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 3189
In Stock
  • 1 $6.4200
  • 10 $5.3930
  • 100 $4.3632
  • 800 $3.8784
  • 1,600 $3.3209
  • 2,400 $3.1270
$3.1270 / $6.4200 Buy Now
DISTI # FDB86135
Avnet Americas Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB86135) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 800 $3.5520
  • 1,600 $3.4560
  • 3,200 $3.3600
  • 4,800 $3.2640
  • 6,400 $3.1680
  • 8,000 $3.0720
  • 80,000 $2.9760
$2.9760 / $3.5520 Buy Now
DISTI # 512-FDB86135
Mouser Electronics MOSFET PWM PFC COMBO RoHS: Compliant 19575
  • 1 $5.0000
  • 10 $4.5000
  • 25 $4.4900
  • 100 $3.9800
  • 250 $3.9600
  • 500 $3.6800
  • 800 $3.2100
  • 2,400 $3.1200
$3.1200 / $5.0000 Buy Now
DISTI # FDB86135
Avnet Americas Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB86135) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 800 $3.5520
  • 1,600 $3.4560
  • 3,200 $3.3600
  • 4,800 $3.2640
  • 6,400 $3.1680
  • 8,000 $3.0720
  • 80,000 $2.9760
$2.9760 / $3.5520 Buy Now
DISTI # FDB86135
Avnet Americas Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB86135) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 800 $3.5520
  • 1,600 $3.4560
  • 3,200 $3.3600
  • 4,800 $3.2640
  • 6,400 $3.1680
  • 8,000 $3.0720
  • 80,000 $2.9760
$2.9760 / $3.5520 Buy Now
DISTI # FDB86135
Avnet Asia Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB86135) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 20 Weeks, 0 Days 0
  • 800 $3.1579
  • 1,600 $3.1169
  • 2,400 $3.0769
  • 4,000 $3.0380
  • 8,000 $2.9630
  • 20,000 $2.8916
  • 40,000 $2.8235
$2.8235 / $3.1579 Buy Now
DISTI # FDB86135
Avnet Silica Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB86135) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDB86135
EBV Elektronik Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB86135) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 3 Weeks, 1 Days EBV - 0
Buy Now
DISTI # 2083232RL
Farnell MOSFET, N CH, 100V, 120A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Reel 0
  • 1 $2.6724
$2.6724 Buy Now
DISTI # 2083232
Farnell MOSFET, N CH, 100V, 120A, TO-263 RoHS: Compliant Min Qty: 1 Lead time: 16 Weeks, 1 Days Container: Cut Tape 0
  • 1 $2.6724
$2.6724 Buy Now
Wuhan P&S - Min Qty: 1 473
  • 1 $8.3700
  • 100 $5.3400
  • 500 $4.4100
  • 1,000 $4.0500
$4.0500 / $8.3700 Buy Now

Part Details for FDB86135

FDB86135 Part Data Attributes

Parametric Data
FDB86135 onsemi
Buy Now Datasheet
Compare Parts:
FDB86135 onsemi N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 176A, 3.5mΩ, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description TO-263, D2PAK-3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 33 Weeks
Samacsys Manufacturer onsemi
Additional Feature ULTRA LOW-ON RESISTANCE
Avalanche Energy Rating (Eas) 658 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 227 W
Pulsed Drain Current-Max (IDM) 704 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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