Datasheets
FDD3672-F085 by:

N-Channel UltraFET® Trench MOSFET, 100V, 44A, 28mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified

Part Details for FDD3672-F085 by onsemi

Overview of FDD3672-F085 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDD3672-F085

Part # Distributor Description Stock Price Buy
DISTI # 48AC0925
Newark Nmos Dpak 100V 28 Mohm/Reel |Onsemi FDD3672-F085 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # FDD3672-F085
Avnet Americas Trans MOSFET N-CH 100V 44A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD3672-F085) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
RFQ
Rochester Electronics FDD3672 - N-Channel UltraFET Trench MOSFET, 100V, 44A, 28mOhm RoHS: Compliant Status: Obsolete Min Qty: 1 23195
  • 1 $0.8117
  • 25 $0.7955
  • 100 $0.7630
  • 500 $0.7305
  • 1,000 $0.6899
$0.6899 / $0.8117 Buy Now

Part Details for FDD3672-F085

FDD3672-F085 CAD Models

FDD3672-F085 Part Data Attributes

FDD3672-F085 onsemi
Buy Now Datasheet
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FDD3672-F085 onsemi N-Channel UltraFET® Trench MOSFET, 100V, 44A, 28mΩ, TO-252 3L (DPAK), 2500-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Part Package Code TO-252 3L (DPAK)
Package Description DPAK-3/2
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 73 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 144 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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