Datasheets
FDD3680 by:

100V N-Channel PowerTrench® MOSFET 25A, 46mΩ, 2500-REEL

Part Details for FDD3680 by onsemi

Overview of FDD3680 by onsemi

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Applications Consumer Electronics Energy and Power Systems Transportation and Logistics Medical Imaging Renewable Energy Automotive

Price & Stock for FDD3680

Part # Distributor Description Stock Price Buy
DISTI # 58K1435
Newark N Channel Mosfet, 100V, 25A, To-252, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:68W Rohs Compliant: Yes |Onsemi FDD3680 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # FDD3680
Avnet Americas Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3680) RoHS: Compliant Min Qty: 610 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 449292 Partner Stock
  • 610 $1.2136
  • 620 $1.1808
  • 1,300 $1.1480
  • 3,100 $1.1152
  • 6,100 $1.0824
  • 31,000 $1.0496
  • 61,000 $1.0168
$1.0168 / $1.2136 Buy Now
Flip Electronics Stock, ship today 449292
  • 1 $0.8200
$0.8200 RFQ

Part Details for FDD3680

FDD3680 CAD Models

FDD3680 Part Data Attributes

FDD3680 onsemi
Buy Now Datasheet
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FDD3680 onsemi 100V N-Channel PowerTrench® MOSFET 25A, 46mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 245 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD3680

This table gives cross-reference parts and alternative options found for FDD3680. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3680, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDD3680 25A, 100V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC FDD3680 vs FDD3680
FDD3680 Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD3680 vs FDD3680
FDD3680_NL Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD3680 vs FDD3680_NL
Part Number Description Manufacturer Compare
FDD3680 Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD3680 vs FDD3680
FDD3680_NL Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FDD3680 vs FDD3680_NL

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