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100V N-Channel PowerTrench® MOSFET 25A, 46mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K1435
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Newark | N Channel Mosfet, 100V, 25A, To-252, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:68W Rohs Compliant: Yes |Onsemi FDD3680 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
DISTI #
FDD3680
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Avnet Americas | Trans MOSFET N-CH 100V 25A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD3680) RoHS: Compliant Min Qty: 610 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 449292 Partner Stock |
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$1.0168 / $1.2136 | Buy Now |
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Flip Electronics | Stock, ship today | 449292 |
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$0.8200 | RFQ |
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FDD3680
onsemi
Buy Now
Datasheet
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FDD3680
onsemi
100V N-Channel PowerTrench® MOSFET 25A, 46mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 245 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 25 A | |
Drain-source On Resistance-Max | 0.046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDD3680. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3680, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDD3680 | 25A, 100V, 0.046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD3680 vs FDD3680 |
FDD3680 | Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD3680 vs FDD3680 |
FDD3680_NL | Power Field-Effect Transistor, 25A I(D), 100V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD3680 vs FDD3680_NL |