Datasheets
FDD3682 by:

N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL

Part Details for FDD3682 by Fairchild Semiconductor Corporation

Overview of FDD3682 by Fairchild Semiconductor Corporation

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Price & Stock for FDD3682

Part # Distributor Description Stock Price Buy
Bristol Electronics   1376
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 5.5A I(D), 100V, 0.036OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 120
  • 1 $4.0000
  • 31 $2.2000
  • 69 $2.0000
$2.0000 / $4.0000 Buy Now
Chip1Cloud MOSFET N-CH 100V 32A D-PAK 10000
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 2300
  • 1 $2.3100
  • 100 $1.7300
  • 1,000 $1.5000
$1.5000 / $2.3100 Buy Now
Sense Electronic Company Limited TO252 1306
RFQ
Win Source Electronics MOSFET N-CH 100V 32A D-PAK 78724
  • 60 $0.8760
  • 140 $0.7190
  • 220 $0.6970
  • 300 $0.6740
  • 385 $0.6520
  • 515 $0.5840
$0.5840 / $0.8760 Buy Now

Part Details for FDD3682

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FDD3682 Part Data Attributes

FDD3682 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD3682 Fairchild Semiconductor Corporation N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description TO-252AA, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 55 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.036 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 95 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDD3682

This table gives cross-reference parts and alternative options found for FDD3682. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3682, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HUF75617D3ST Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD3682 vs HUF75617D3ST
HUF75617D3S_NL Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation FDD3682 vs HUF75617D3S_NL
HUF75617D3S 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation FDD3682 vs HUF75617D3S
FDD3682 N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm, 2500-REEL onsemi FDD3682 vs FDD3682
HUF75617D3ST 16A, 100V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC FDD3682 vs HUF75617D3ST
Part Number Description Manufacturer Compare
FDD3682 N-Channel PowerTrench® MOSFET, 100V, 32A, 0.036 ohm, 2500-REEL onsemi FDD3682 vs FDD3682
HUF75617D3S_NL Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation FDD3682 vs HUF75617D3S_NL
HUF75617D3ST Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation FDD3682 vs HUF75617D3ST

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