Part Details for FDD86102LZ by onsemi
Overview of FDD86102LZ by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD86102LZ
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
88T3248
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Newark | Mosfet, N Channel, 100V, 35A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Onsemi FDD86102LZ Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2554 |
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$0.8740 / $1.6600 | Buy Now |
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DISTI #
27T6423
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Newark | Fet 100V 22.5 Mohm Dpak/Reel Rohs Compliant: Yes |Onsemi FDD86102LZ Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6590 / $0.8930 | Buy Now |
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DISTI #
FDD86102LZFSCT-ND
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DigiKey | MOSFET N-CH 100V 8A/35A DPAK Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
20180 In Stock |
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$0.6484 / $1.5500 | Buy Now |
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DISTI #
FDD86102LZ
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Avnet Americas | Trans MOSFET N-CH 100V 8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD86102LZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.6432 / $0.7677 | Buy Now |
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DISTI #
512-FDD86102LZ
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Mouser Electronics | MOSFET 100V N-Channel PowerTrench MOSFET RoHS: Compliant | 14488 |
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$0.6480 / $1.4600 | Buy Now |
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Future Electronics | FDD86102LZ Series 100 V 8 A 22.5 mOhm N-Ch Shielded Gate PowerTrench Mosfet RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.6550 / $0.6800 | Buy Now |
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Future Electronics | FDD86102LZ Series 100 V 8 A 22.5 mOhm N-Ch Shielded Gate PowerTrench Mosfet RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.6550 / $0.6800 | Buy Now |
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Rochester Electronics | FDD86102LZ - N-Channel Shielded Gate PowerTrench MOSFET 100 V, 35 A, 22.5 mohm RoHS: Compliant Status: Active Min Qty: 1 | 216000 |
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$0.6429 / $0.7564 | Buy Now |
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DISTI #
FDD86102LZ
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Avnet Americas | Trans MOSFET N-CH 100V 8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD86102LZ) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.6432 / $0.7677 | Buy Now |
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DISTI #
FDD86102LZ
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TME | Transistor: N-MOSFET, unipolar, 100V, 35A, 54W, DPAK Min Qty: 1 | 1657 |
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$0.9100 / $1.3800 | Buy Now |
Part Details for FDD86102LZ
FDD86102LZ CAD Models
FDD86102LZ Part Data Attributes
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FDD86102LZ
onsemi
Buy Now
Datasheet
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FDD86102LZ
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 35 A, 22.5 mΩ, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 29 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 84 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.0225 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 54 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |