Part Details for FDD8880 by Fairchild Semiconductor Corporation
Overview of FDD8880 by Fairchild Semiconductor Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FDD8880
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 9 | 425 |
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$0.2109 / $0.5625 | Buy Now |
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Bristol Electronics | 2232 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 30V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 340 |
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$0.2250 / $0.7500 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 30V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 144 |
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$0.5460 / $1.0920 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 30V, 0.015OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 206 |
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$0.8340 / $1.6680 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 35A, 30V, 0.015ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 | 765 |
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$0.2912 / $0.3426 | Buy Now |
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Chip1Cloud | MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R | 8000 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 30V 58A DPAK / Trans MOSFET N-CH 30V 13A 3-Pin(2+Tab) DPAK T/R | 134300 |
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$0.4060 / $0.6080 | Buy Now |
Part Details for FDD8880
FDD8880 CAD Models
FDD8880 Part Data Attributes:
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FDD8880
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDD8880
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 35A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 53 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 35 A | |
| Drain-source On Resistance-Max | 0.015 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |