There are no models available for this part yet.
Overview of FDMC8854 by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 6 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for FDMC8854 by Fairchild Semiconductor Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
2156-FDMC8854-ND
|
DigiKey | POWER FIELD-EFFECT TRANSISTOR, 1 Min Qty: 447 Container: Bulk MARKETPLACE PRODUCT |
1100 In Stock |
|
$0.6700 | Buy Now | |
Bristol Electronics | 2773 |
|
RFQ | ||||
Quest Components | 15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET | 2218 |
|
$0.6492 / $2.1640 | Buy Now | ||
Quest Components | 15 A, 30 V, 0.0057 ohm, N-CHANNEL, Si, POWER, MOSFET | 100 |
|
$0.6059 / $1.2984 | Buy Now | ||
Rochester Electronics | Power Field-Effect Transistor, 15A, 30V, 0.0057ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2155 |
|
$0.5771 / $0.6789 | Buy Now | ||
ComSIT USA | 30V, 15A, 5.7 MILLI OHM N-CHANNEL POWER TRENCH MOSFET Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
|
|
RFQ |
CAD Models for FDMC8854 by Fairchild Semiconductor Corporation
Part Data Attributes for FDMC8854 by Fairchild Semiconductor Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code
|
MLP
|
Package Description
|
ROHS COMPLIANT, POWER 33, 8 PIN
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Pin Count
|
8
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Manufacturer Package Code
|
8LD,MLP,DUAL, 3.3MM SQUARE
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
15 A
|
Drain-source On Resistance-Max
|
0.0057 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
S-PDSO-F8
|
JESD-609 Code
|
e4
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
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8
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
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SQUARE
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
41 W
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Pulsed Drain Current-Max (IDM)
|
30 A
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Qualification Status
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Not Qualified
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Surface Mount
|
YES
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Terminal Finish
|
NICKEL PALLADIUM GOLD
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Terminal Form
|
FLAT
|
Terminal Position
|
DUAL
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Time@Peak Reflow Temperature-Max (s)
|
30
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
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