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Part Details for FDMS10C4D2N by onsemi
Overview of FDMS10C4D2N by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for FDMS10C4D2N
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
08AC1050
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Newark | Fet 100V 4.2 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS10C4D2N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.2700 / $1.3100 | Buy Now |
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DISTI #
FDMS10C4D2NOSCT-ND
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DigiKey | MOSFET N-CH 100V 17A 8PQFN Min Qty: 1 Lead time: 24 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
1960 In Stock |
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$1.2602 / $2.9000 | Buy Now |
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DISTI #
FDMS10C4D2N
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Avnet Americas | MOSFET Energy Inversion DC-AC - Tape and Reel (Alt: FDMS10C4D2N) RoHS: Compliant Min Qty: 685 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 64416 Partner Stock |
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$0.9052 / $1.0804 | Buy Now |
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DISTI #
FDMS10C4D2N
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Avnet Americas | MOSFET Energy Inversion DC-AC - Tape and Reel (Alt: FDMS10C4D2N) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 64416 Factory Stock |
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$1.3062 / $1.4622 | Buy Now |
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DISTI #
512-FDMS10C4D2N
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Mouser Electronics | MOSFET Energy Inversion DC-AC RoHS: Compliant | 3080 |
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$1.1800 / $2.9000 | Buy Now |
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Rochester Electronics | FDMS10C4D2N - N-Channel Shielded Gate PowerTrench MOSFET 100V, 124A RoHS: Compliant Status: Active Min Qty: 1 | 169548 |
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$1.2100 / $1.4200 | Buy Now |
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DISTI #
FDMS10C4D2N
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TME | Transistor: N-MOSFET, unipolar, 100V, 48A, Idm: 510A, 125W, Power56 Min Qty: 1 | 0 |
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$1.5600 / $2.7900 | RFQ |
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DISTI #
FDMS10C4D2N
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$1.2200 | Buy Now |
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DISTI #
FDMS10C4D2N
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Avnet Silica | MOSFET Energy Inversion DC-AC (Alt: FDMS10C4D2N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDMS10C4D2N
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EBV Elektronik | MOSFET Energy Inversion DC-AC (Alt: FDMS10C4D2N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDMS10C4D2N
FDMS10C4D2N CAD Models
FDMS10C4D2N Part Data Attributes
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FDMS10C4D2N
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS10C4D2N
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 100V, 124A, 4.2mΩ, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | QFN-8 | |
| Manufacturer Package Code | 483AE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 47 Weeks | |
| Date Of Intro | 2016-09-09 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 337 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 124 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 510 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 52 ns | |
| Turn-on Time-Max (ton) | 49 ns |